Microelectronics International: Volume 30 Issue 2

Growth of InN thin films on different Si substrates at ambient temperature

The purpose of this paper was to investigate the growth dependence of InN on Si substrate with different orientation through RF reactive magnetron sputtering in ambient…

Potentiality of polysilicon nanogap structure for label‐free biomolecular detection

The purpose of this paper was to systematically study the electrical properties of 5‐, 42‐ and 75‐nm gap polysilicon structures to evaluate the potentiality of these structures to…

Non‐destructive quantitative phase analysis of an LTCC material

In this manuscript the purpose is to present and evaluate the developed non‐destructive method for analysing the phase composition of LTCC Du Pont “Green Tape 951” material fired…

Thermal resistance studies of surface modified heat sink for 3W LED using transient curve

Surface configuration at the interface between two materials makes a huge difference on thermal resistance. Thermal transient analysis is a powerful tool for thermal…

Microwave studies by perturbation of Ag thick film microstrip ring resonator using superstrate of bismuth strontium manganites

The purpose of this paper was to determine the complex permittivity of bismuth strontium manganites (Bi_1−xSr_xMnO₃) in the 8‐12 GHz range by using perturbation of Ag thick film…

Thick film screen printed environmental and chemical sensor array reference electrodes suitable for subterranean and subaqueous deployments

The purpose of this paper is to report thick film environmental and chemical sensor arrays designed for deployment in both subterranean and submerged aqueous applications.

Ionic contaminations level and cleaning flip chip BGA package via a new cleaning solvent technology

This paper aims to discuss the effects of ionic contaminations on the die surface of high lead flip chip ball grid array (FCBGA) package. Ionic contaminations from the flux…

Hemlock Semiconductor announces layoffs, reduces production as a result of industry oversupply, international trade disputes

Molex receives Delphi’s Pinnacle Awards for Supplier Excellence

How ‘transparent’ is graphene?

Engineered Material Systems introduces new low-temperature cure die attach

NanoKTN held their first Nanotechnology in Medical Devices event in London

Fairchild Semiconductor’s high-voltage MOSFETs provide industry-leading robust body diode performance in AC-DC power applications

Fairchild Semiconductor’s Dual Cool™ package improves power density and performance in DC-DC power applications

International diary

Tiny compound semiconductor transistor could challenge silicon’s dominance

Cadence Encounter Technologies enable Open-Silicon to reach 2.2 GHz performance on 28 nm ARM dual-core Cortex-A9 processor

Imec and Synopsys expand FinFET collaboration to 10 nm geometry

Cogiscan invests in technological innovation

MEMS oscillators – great growth potential and superior performance

Atotech’s new clean rooms for semiconductor production

EAS’ new digital position sensor offers contactless measurement of magnetic field fluctuations

Semiconductor Industry Forecast Seminar 2013London, 22 January