COMPEL - The international journal for computation and mathematics in electrical and electronic engineering: Volume 10 Issue 4
Table of contents
CHARGE TRANSFER IN THE PRESENCE OF POTENTIAL BARRIERS
Edmund K. Banghart, James P. Lavine, Joseph M. Pimbley, Bruce C. BurkeyNumerical and analytical solutions of the carrier continuity equation are found for the problem of charge transfer in charge‐coupled devices in the presence of potential barriers…
A HYBRID SOLUTION OF THE SEMICONDUCTOR DEVICE EQUATIONS
Ilan Efrat, Moshe IsraeliState of the art programs for the solution of the drift diffusion semiconductor equations are based on finite difference techniques, or on certain combinations of finite elements…
TRANSIENT SIMULATION OF SILICON DEVICES UNDER HIGH CARRIER INJECTION. COMPARISON OF VARIOUS TIME STEPPING SCHEMES
A. MICHEZ, G. BORDUREThis paper presents an approach to the time discretization of electron and hole continuity equations in semiconductors. We propose a nth order backward differentiation formula…
INTRINSIC HIGH‐FREQUENCY OSCILLATIONS AND EQUIVALENT CIRCUIT MODEL IN THE NEGATIVE DIFFERENTIAL RESISTANCE REGION OF RESONANT TUNNELING DEVICES
F.A. Buot, K.L. JensenIntrinsic high‐frequency oscillations (≈2.5 THz) in current and corresponding quantum well density, which have been simulated for a fixed bias voltage in the Negative Differential…
TWO‐DIMENSIONAL MODELING OF QUANTUM‐WELL SEMICONDUCTOR LASERS
Z.‐M. Li, K.M. Dzurko, S.P. McAlisterWe have developed a two‐dimensional model for quantum‐well lasers which solves, self‐consistently, the semiconductor equations together with the complex scalar wave equation and…
TAILORING THE TWO DIMENSIONAL ELECTRON GAS DISTRIBUTION BY SELECTIVE DOPING OF THE QUANTUM WELL
A.F.M. Anwar, R.D. CarrolThe effect of doping the quantum well (QW) on the distribution of two dimensional electron gas (2DEG) in high electron mobility transistors (HEMT) is discussed. In con‐ventional…
A TRANSPORT MODEL FOR CARRIERS IN SMALL SPATIAL/TEMPORAL SCALE COMPOUND SEMICONDUCTOR DEVICES
Ming‐Cheng Cheng, E.E. KunhardtA non‐equilibrium multi‐valley transport model for carriers in compound semiconductor devices has been developed. This macroscopic transport model provides an efficient scheme for…
SIMULATION OF BIPOLAR TRANSPORT IN SEMICONDUCTOR P‐N JUNCTIONS USING THE GENERALIZED HYDRODYNAMIC EQUATIONS
Mohammad Hamza, H. Morel, J.P. ChanteA full consistent discretization scheme of the improved carrier density, momentum‐ and energy‐conservation equations is presented. The carrier heat flux as well as the convection…
A COMPARISON BETWEEN THE HETEROJUNCTION BIPOLAR TRANSISTOR POWER PERFORMANCE COMPUTED USING LARGE SIGNAL “Y” PARAMETERS AND A FULL TIME DOMAIN SIMULATION
Douglas A. Teeter, Jack R. East, Richard K. Mains, George I. HaddadThis model is intended to simulate the large signal performance of heterojunction bipolar transistors for use in high power, high frequency, oscillators, amplifiers, and mixers. A…
UNIFIED FRAMEWORK FOR THERMAL, ELECTRICAL, MAGNETIC, AND OPTICAL SEMICONDUCTOR DEVICE MODELING
Gerhard WachutkaThe “thermodynamic model” constitutes a unified theoretical framework for the coupled simulation of carrier and energy flow in semiconductor devices under general ambient…
AN EMPIRICAL MODEL FOR THE ELECTRONIC STOPPING OF BORON IN SILICON
G. Hobler, H. Pötzl, L. Palmetshofer, R. Schork, J. Lorenz, C. Tian, S. Gara, G. StingederA three‐parameter model for the electronic stopping power of boron in silicon is presented. The model parameters are determined from implantations into amor‐phous silicon and from…
A COMPREHENSIVE AND COMPUTATIONALLY EFFICIENT MODELING STRATEGY FOR SIMULATION OF BORON ION IMPLANTATION INTO SINGLE‐CRYSTAL SILICON WITH EXPLICIT DOSE AND IMPLANT ANGLE DEPENDENCE
Changhae Park, Kevin M. Klein, Al F. Tasch, Robert B. Simonton, Steve Novak, Gayle LuxA comprehensive and computationally efficient modeling strategy for the rapid and accurate simulation of implanted impurity distribution profiles in single‐crystal silicon has…
NOVEL: A NONLINEAR VISCOELASTIC MODEL FOR THERMAL OXIDATION OF SILICON
J.P. Peng, D. Chidambarrao, G.R. SrinivasanWe have developed a computer oxidation modeling program, named NOVEL, which has been integrated into our process simulator FINDPRO. It combines the modified Deal‐Grove growth rate…
OPTICAL POWER COUPLING IN SYMMETRIC TRIANGULAR PERIODIC STRUCTURES
V. Jayan, P.R. VayaSEM picture of rectangular gratings realised by chemical etching mostly resembled a triangular grating. Symmetric triangular gratings can give better directionality to the DFB…
SIMULATION OF MOS CIRCUITS USING SPECTRAL TECHNIQUE IN RELAXATION FRAMEWORK
O.A. Palusinski, M.W. GuariniWaveform relaxation has potential to overcome problem of excessive computer run times which are necessary for simulation of larger circuits with the use of existing simulators…
TRANSIENT AND SMALL‐SIGNAL HIGH‐FREQUENCY SIMULATION OF NUMERICAL DEVICE MODELS EMBEDDED IN AN EXTERNAL CIRCUIT
Michael SchröterA program for numerical simulation of two‐dimensional semiconductor devices coupled with an external circuit is described. The circuit equations are formulated using modified…
BULK IMAGE EFFECTS OF PHOTORESIST IN THREE‐DIMENSIONAL PROFILE SIMULATION
Tatsumi ISHIZUKA3D bulk image effects in high‐NA lens lithography are studied through 3D exposure and development simulations by applying a Mack model to the 3D exposure process.
2D PROCESS SIMULATION OF DOPANT DIFFUSION IN POLYSILICON
SK Jones, A GérodolleA new model to describe dopant diffusion and recrystallisation in polycrystalline silicon during thermal treatment is presented. The full 3D microstructure of the material is…
A MULTIGRID ALGORITHM WITH TIME‐DEPENDENT, LOCALLY REFINED GRIDS FOR SOLVING THE NONLINEAR DIFFUSION EQUATION ON A NONRECTANGULAR GEOMETRY ‐ PRACTICAL ASPECTS
W. JoppichThe numerical solution of the diffusion equation in VLSI process simulation leads to large systems of nonlinear equations which have to be solved at every time step. For this…
SEMICONDUCTOR DEVICE MODELLING FOR HETEROJUNCTIONS STRUCTURES WITH MIXED FINITE ELEMENTS
F. Hecht, A. Marrocco, E. Caquot, M. FilocheNumerical simulation of the static semiconductor device equations using mixed finite element for the approximation and A.D.I. techniques (Douglas‐Rachford with local time steps…
ADVANCED NUMERICAL TECHNIQUES IN SEMICONDUCTOR DEVICE SIMULATION
W.H.A. SchildersIn the past decade, very effective techniques for the solution of the drift‐diffusion equations have been developed. This has enabled the simulation of a large variety of…
ALGORITHM FOR MODELLING GENERALLY DESCRIBED SEMICONDUCTORS
Sasa Sokolić, Slavko Amon, Franc Smole, Dejan KrizajA general algorithm for analysis of semiconductors with arbitrary models for heavy doping phenomena is presented. Different models, theoretical as well as empirical, were applied…
A USEFUL ANALOGY BETWEEN SEMICONDUCTOR VOLTAGE‐CURRENT CHARACTERISTICS AND COMBUSTION BRANCHING DIAGRAMS
Karl GustafsonThe Van Roosbroeck semiconductor device equations are put into useful analogy with the Arrhenius equations of combustion theory. Both, when written in appropriate variables, enjoy…
A NOTE ON CURRENT DISCRETIZATION IN THE HYDROMODEL
Kamel Souissi, F. Odeh, Antonio GnudiWe propose a modified discretization for the current continuity equation in the hydromodel for semiconductors. It combines ease of implementation within existing codes and…
WAVEFORM RELAXATION BASED CIRCUIT OPTIMIZATION
Bo Olde, Sven MattissonA multicomputer implementation of a circuit optimization program is presented. The program, called COCO, is tailored for the design problems encountered when the large signal…
CONNECTING WAVEFORM RELAXATION CONVERGENCE PROPERTIES TO THE A‐ STABILITY OF MULTIRATE INTEGRATION METHODS
J. White, F. OdehApplication of the waveform relaxation algorithm to the differential‐algebraic equations generated by problems in circuit and semiconductor device simulation have demonstrated…
QUANTUM TRANSPORT: NOVEL APPROACHES IN THE FORMULATION AND APPLICATIONS TO QUANTUM‐BASED SOLID‐STATE DEVICES
F.A. Buot, K.L. JensenA novel approach to many‐body quantum transport theory which emphasize the role of localized orbitals, and their lattice Fourier transforms, as dynamical basis states is given…
MONTE CARLO TECHNIQUE FOR SIMULATION OF HIGH ENERGY ELECTRONS
M. Nedjalkov, P. VitanovA Monte Carlo (MC) technique useful for calculation of the high energy tail of the distribution function (d.f) is proposed. The well known MC technique for simulation in rarely…
ITERATION APPROACH FOR SOLVING THE INHOMOGENEOUS BOLTZMANN EQUATION
P. VITANOV, M. NEDJALKOVThe iteration approach consists of applying Numerical Monte Carlo methods for calculation of linear functional of iterated functions to an integral form of the Boltz‐mann…
MONTE CARLO APPROACH TO THE QUANTUM ORIGIN OF SHOT NOISE SUPPRESSION IN TRANSPORT THROUGH MICROSTRUCTURES
L.Y. Chen, G. Levine, J. Yang, C.S. TingA stochastic process with repulsive correlation is proposed to simulate the nonequilibrium electronic transport through microstructures under finite bias voltage. Since an…
MONTE CARLO SIMULATION OF SiGe/Si MESFETs
M. Gokhale, A.F.M. Anwar, R.D. Carrol, F.C. JainThe current‐voltage (Id—Vd) characteristics and microwave performance of Si1−xGex MESFETs are discussed. The 2D Poisson's equation along with the drift and diffusion equation are…
A NUMERICAL STUDY OF THE DEPENDENCE OF UNITY GAIN BANDWIDTH fT ON POLYSILICON EMITTER IN BIPOLAR TRANSISTORS
E.F. CHOR, L.S. TANThe effects of polysilicon emitter on the high frequency performance of bipolar transistors have been investigated numerically. The presence of polysilicon grain boundaries was…
EFFECTS OF JUNCTIONS ON CONDUCTION PROPERTIES OF GaAs n‐i‐n STRUCTURES INCLUDING DEEP LEVELS
K. Horio, H. YanaiI‐V characteristics of GaAs n‐i‐n structures are calculated by considering impact ionization of carriers. Impact ionization at reverse‐biased n‐i junction becomes a cause of steep…
DISCRETIZATION METHODS AND PHYSICAL MODELS FOR SIMULATING LEAKAGE CURRENTS IN SEMICONDUCTOR DEVICES WITH APPLICATION TO MODELING TRENCH‐DRAM CELLS
J.B. Johnson, S.H. Voldman, T.D. LintonChallenges to a robust and accurate implementation of electric‐field‐enhanccd thermal‐generation mechanisms in a drift‐diffusion‐based semiconductor‐device simulation code are…
INVERSE MODELLING OF AMORPHOUS SILICON SOLAR CELL TIME‐OF‐FLIGHT TRANSIENTS
A.A. Buykx, H.M. Wentinck, W. Crans, J.W. MetselaarFor the extraction of transport parameters from Time‐of‐Flight (TOF) measurements a simulation and optimization program was developed that uses the principle of Inverse Modelling…
MUSIC — A MULTIGRID SIMULATOR FOR IC FABRICATION PROCESSES
S. Mijalković, D. Pantić, Z. Prijić, S. Mitrović, N. StojadinovićThis paper describes a new two‐dimensional process simulation program MUSIC (MUltigrid Simulator for IC fabrication processes) which is prospective for the efficient IC process…
GaAs CCD CHARGE TRANSFER SIMULATION
Richard E. Poore, Peter B. KoselA computer program for the solution of the single carrier semiconductor equations in GaAs has been developed to simulate charge storage and transfer in GaAs charge‐coupled…
ADVANCED DEVICE MODELLING AT PHILIPS: THE CURRY PACKAGE
A. Heringa, M.M.A. Driessen, J.M.F. Peters, W.H.A. SchildersThe package CURRY offers a wide range of built‐in facilities for 2D device modelling of a large variety of structures such as MOS, bipolar and charge coupled devices. These…
STATUS OF THE DEVICE SIMULATOR PRISM
Wim Schoenmaker, Rudi Vankemmel, Rudi Cartuyvels, Wim Magnus, Bert TijskensPRISM assumes that the physics of semiconductor devices, at least the electrical behaviour, can be explained with the following equations. Poisson equation:
ISSN:
0332-1649e-ISSN:
2054-5606ISSN-L:
0332-1649Online date, start – end:
1982Copyright Holder:
Emerald Publishing LimitedOpen Access:
hybridEditor:
- Prof Jan Sykulski