A COMPREHENSIVE AND COMPUTATIONALLY EFFICIENT MODELING STRATEGY FOR SIMULATION OF BORON ION IMPLANTATION INTO SINGLE‐CRYSTAL SILICON WITH EXPLICIT DOSE AND IMPLANT ANGLE DEPENDENCE

Abstract

A comprehensive and computationally efficient modeling strategy for the rapid and accurate simulation of implanted impurity distribution profiles in single‐crystal silicon has been developed. This modeling strategy exploits the advantages of both Monte Carlo simulation and semi‐empirical models by combining the two approaches in a complementary manner. The dual Pearson semi‐empirical model is used to accurately and efficiently model the dose and implant angle dependence of impurity profiles as well as the dependence on energy. This new comprehensive model allows convenient and accurate simulation of implanted boron distribution profiles in single‐crystal silicon as a function of dose, tilt angle, and rotation angle, in addition to ion energy, and it has been demonstrated by implementation in the process simulation code SUPREM III.

Citation

Park, C., Klein, K.M., Tasch, A.F., Simonton, R.B., Novak, S. and Lux, G. (1991), "A COMPREHENSIVE AND COMPUTATIONALLY EFFICIENT MODELING STRATEGY FOR SIMULATION OF BORON ION IMPLANTATION INTO SINGLE‐CRYSTAL SILICON WITH EXPLICIT DOSE AND IMPLANT ANGLE DEPENDENCE", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 10 No. 4, pp. 331-340. https://doi.org/10.1108/eb051710