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MONTE CARLO SIMULATION OF SiGe/Si MESFETs

M. Gokhale (ESE Department, The University of Connecticut Storrs, CT 06269–3157 UTRC, East Hartford, CT)

A.F.M. Anwar (ESE Department, The University of Connecticut Storrs, CT 06269–3157 UTRC, East Hartford, CT)

R.D. Carrol (ESE Department, The University of Connecticut Storrs, CT 06269–3157 UTRC, East Hartford, CT)

F.C. Jain (ESE Department, The University of Connecticut Storrs, CT 06269–3157 UTRC, East Hartford, CT)

COMPEL - The international journal for computation and mathematics in electrical and electronic engineering

ISSN: 0332-1649

Article publication date: 1 April 1991

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Abstract

The current‐voltage (Id—Vd) characteristics and microwave performance of Si1−xGex MESFETs are discussed. The 2D Poisson's equation along with the drift and diffusion equation are solved using a finite difference technique to calculate device parameters such as gm and fT. The low field carrier mobility is computed by using a single partice Monte Carlo program. In the simulation all relevant scattering mechanisms are accounted for.

Citation

Gokhale, M., Anwar, A.F.M., Carrol, R.D. and Jain, F.C. (1991), "MONTE CARLO SIMULATION OF SiGe/Si MESFETs", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 10 No. 4, pp. 547-552. https://doi.org/10.1108/eb051729

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MCB UP Ltd

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MONTE CARLO SIMULATION OF SiGe/Si MESFETs

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