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1 – 5 of 5A.L. Alexsandrov, P.A. Androsenko, V.M. Bedanov, A.M. Bekesheva, E.E. Dagnan, O.E. Dnitrieva, G.V. Gadiyak, V.P. Ginkin, M.S. Ivanov, Zh.L. Korobitsina, T.M. Lukhanova, M.S. Obrekht, A.A. Shinanskiy, V.A. Schveigert, I.V. Schveigert, E.G. Tishkovsky and Yu.P. Zhydkov
In this paper the MOPIT system for the simulation of devices and manufacturing processes is presented. The MOPIT system is meant for the simulation of the following semiconductor…
Abstract
In this paper the MOPIT system for the simulation of devices and manufacturing processes is presented. The MOPIT system is meant for the simulation of the following semiconductor processing : ion implantation of impurities , diffusion , radiation enhanced diffusion , thermal oxidation of silicon , molecular‐beam epitaxy, plasma‐chemical etching and deposition, cross‐sectional profile evolution of trench in plasma‐etching and deposition; as well as the following devices: MOS‐structures , high‐voltage diode, element of memory, charge accumulation in a sub‐gate dielectric.
G.V. GADIYAK, M.S. OBRECHT and S.P. SINITSA
In this paper we consider the effects of recombination during polarization on passing a current through SiN4 and SiO2. In the literature, some works have been devoted to the…
Abstract
In this paper we consider the effects of recombination during polarization on passing a current through SiN4 and SiO2. In the literature, some works have been devoted to the problem of the passage of a current through MNOS‐structures. However, these studies related mainly to monopolar injection or bipolar injection but ignored recombination.
G.V. Gadiyak and D.E. Blaghinin
The radiation enhanced diffusion of implanted boron was modeled by considering the kinetic reaction between point defects, dislocations and boron atoms. The diffusion model…
Abstract
The radiation enhanced diffusion of implanted boron was modeled by considering the kinetic reaction between point defects, dislocations and boron atoms. The diffusion model utilizes Monte‐Carlo generated point defect profile, generated dislocation profile for high doze hydrogen implantation. Excellent simulation results has been achieved by using a single set of diffusion and kinetic parameters to model the radiation enhanced diffusion of boron for a wide range of hydrogen implanted doses.
G.V. Gadiyak, J.L. Korobitsina and V.I. Kranarenko
Computer code complex for the thermal oxidation of silicon is presented. There are one‐dimensional model and two‐ dimensional models:the model of viscoelastic oxide and the…
Abstract
Computer code complex for the thermal oxidation of silicon is presented. There are one‐dimensional model and two‐ dimensional models:the model of viscoelastic oxide and the hydrodynamical models — an ideal fluid and a viscous fluid models. If nitride mask is absent, a one‐dimensional model is used.The influence of an induced stress on the diffusion and reaction is taken into account.
G.V. Gadiyak, J.L. Korobitsina and V.I. Kramarenko
The model of the thermal oxidation of polycrystalline silicon is described. It includes parabolic equation system for the diffusion process of oxidant in polycrystalline oxide…
Abstract
The model of the thermal oxidation of polycrystalline silicon is described. It includes parabolic equation system for the diffusion process of oxidant in polycrystalline oxide, equations system for the deformation of oxide and nitride mask. The numerical calculations of the reverse L‐shape sealed polybuffer LOCOS are presented.