THE DEVELOPMENT OF THE RADIATION ENHANCED DIFFUSION MODEL OF BORON IN SILICON

Abstract

The radiation enhanced diffusion of implanted boron was modeled by considering the kinetic reaction between point defects, dislocations and boron atoms. The diffusion model utilizes Monte‐Carlo generated point defect profile, generated dislocation profile for high doze hydrogen implantation. Excellent simulation results has been achieved by using a single set of diffusion and kinetic parameters to model the radiation enhanced diffusion of boron for a wide range of hydrogen implanted doses.

Citation

Gadiyak, G.V. and Blaghinin, D.E. (1993), "THE DEVELOPMENT OF THE RADIATION ENHANCED DIFFUSION MODEL OF BORON IN SILICON", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 12 No. 4, pp. 407-416. https://doi.org/10.1108/eb051814