NUMERICAL SIMULATION OF THE THERMAL OXIDATION OF POLYCRYSTALLINE SILICON

Abstract

The model of the thermal oxidation of polycrystalline silicon is described. It includes parabolic equation system for the diffusion process of oxidant in polycrystalline oxide, equations system for the deformation of oxide and nitride mask. The numerical calculations of the reverse L‐shape sealed polybuffer LOCOS are presented.

Citation

Gadiyak, G.V., Korobitsina, J.L. and Kramarenko, V.I. (1993), "NUMERICAL SIMULATION OF THE THERMAL OXIDATION OF POLYCRYSTALLINE SILICON", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 12 No. 4, pp. 417-422. https://doi.org/10.1108/eb051815