COMPEL - The international journal for computation and mathematics in electrical and electronic engineering: Volume 6 Issue 2

ADAPTIVE MESHING APPLIED TO A TWO‐DIMENSIONAL DEVICE SIMULATOR

S.P. EDWARDS, K. De MEYER, Ph. De WILDE

The purpose of using an adaptive meshing strategy is to define the problem well with as few nodes as possible. The extent to which the discrete system adequately represents the…

A NOVEL METHOD FOR SOLVING THE CONTINUITY EQUATIONS

C.J. FITZSIMONS

This paper examines methods for the numerical solution of the continuity equations with the carrier concentrations as dependent variables. The emphasis is on the use of the…

TIME PERTURBATION ANALYSIS FOR THE MOS SYSTEM

Michael GAITAN, Isaak D. MAYERGOYZ

The development of a numerical implementation of the small signal response of the MOS (Metal‐Oxide‐Silicon) capacitor using time perturbation analysis is discussed. The effects of…

TWO‐DIMENSIONAL MODELING AND PARAMETER EXTRACTION OF AGED MOSFETs

H. HADDARA, S. CRISTOLOVEANU

The effect of stress induced defects on the ohmic region characteristics of short channel MOSFETs is analyzed by means of a two dimensional device simulator. The device aging is…

DYNAMICS OF ELECTRON TRANSFER BETWEEN TWO ADJACENT CHANNELS AS CALCULATED BY AN ENSEMBLE MONTE CARLO METHOD

I.C. KIZILYALLI, K. HESS, G.J. IAFRATE, D. SMITH

The dynamical characteristics of electron transfer between two channels are elucidated by using a many‐particle Monte Carlo model with self‐consistent electric fields. The study…

THE MOMENTS OF THE BOLTZMANN TRANSPORT EQUATION AS APPLIED TO THE GALLIUM ARSENIDE PERMEABLE BASE TRANSISTOR

J.P. KRESKOVSKY, M. MEYYAPPAN, H.L. GRUBIN

Solutions to the first three moments of the Boltzmann transport equation and Poisson's equation are obtained for a permeable base transistor (PBT) using linearized, block implicit…

THE EXTRACTION OF TERMINAL CHARGES FROM TWO‐DIMENSIONAL DEVICE SIMULATIONS OF MOS TRANSISTORS

E.J. PRENDERGAST, P. LLOYD, H. DIRKS

Quasi‐static models of n‐terminal semiconductor devices usually express terminal currents as the sum of steady‐state and transient components. We consider here the formulation…

A VISCOELASTIC BEM FOR MODELING OXIDATION

Thye‐Lai TUNG, Jerome CONNOR, Dimitri A. ANTONIADIS

A viscoelastic boundary element method has been developed to model the motion of silicon dioxide and silicon nitride during thermal oxidation of silicon. This technique uses…