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DYNAMICS OF ELECTRON TRANSFER BETWEEN TWO ADJACENT CHANNELS AS CALCULATED BY AN ENSEMBLE MONTE CARLO METHOD

I.C. KIZILYALLI (Coordinated Science Laboratory and Department of Electrical and Computer Engineering, University of Illinois at Urbana, Champaign‐Urbana, IL 61801, USA)
K. HESS (Coordinated Science Laboratory and Department of Electrical and Computer Engineering, University of Illinois at Urbana, Champaign‐Urbana, IL 61801, USA)
G.J. IAFRATE (U.S. Army Electronics Technology and Devices Laboratory, Fort Monmouth, NJ 07703, USA)
D. SMITH (U.S. Army Electronics Technology and Devices Laboratory, Fort Monmouth, NJ 07703, USA)
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Abstract

The dynamical characteristics of electron transfer between two channels are elucidated by using a many‐particle Monte Carlo model with self‐consistent electric fields. The study has been performed to assess switching speeds associated with various novel devices such as velocity modulation transistors and dual channel high electron mobility transistors. Typical time constants for a one micrometer device (0.4 µm gate length) are 3.5 psec for the longitudinal (source‐to‐drain) and 0.2 psec for the transport perpendicular to the interfaces between the two channels.

Citation

KIZILYALLI, I.C., HESS, K., IAFRATE, G.J. and SMITH, D. (1987), "DYNAMICS OF ELECTRON TRANSFER BETWEEN TWO ADJACENT CHANNELS AS CALCULATED BY AN ENSEMBLE MONTE CARLO METHOD", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 6 No. 2, pp. 93-97. https://doi.org/10.1108/eb010307

Publisher

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MCB UP Ltd

Copyright © 1987, MCB UP Limited

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