A VISCOELASTIC BEM FOR MODELING OXIDATION

Abstract

A viscoelastic boundary element method has been developed to model the motion of silicon dioxide and silicon nitride during thermal oxidation of silicon. This technique uses Kelvin's solution reformulated according to the correspondence principle on viscoelasticity. Constant‐velocity loading is chosen to ensure smooth variations in displacement and stress behavior for a wide range of relaxation times.

Citation

TUNG, T., CONNOR, J. and ANTONIADIS, D.A. (1987), "A VISCOELASTIC BEM FOR MODELING OXIDATION", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 6 No. 2, pp. 115-121. https://doi.org/10.1108/eb010310