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To face profound changes from decreasing funding, growing patient expectations and increasing competition in the health-care market, public hospitals began to implement effective quality management (QM) practices following manufacturing and other service industries. However, there was little knowledge relevant to the impact of QM practices on the performance of public hospitals. The study aims to shed some further light on this issue.

The paper extends the previous empirical research to the health-care sectors and suggests the research framework of QM practice-performance relationships in public hospitals. For validation purposes, a cross-sectional survey involving 204 quality managers and directors of large public hospitals was carried out between April and October 2013 in Zhejiang Province, China. Structural equation modeling was used to test the hypothesized relationship between QM practices and hospital performance.

Empirical results support that the implementation of QM practices can bring many benefits to sample hospitals. The dimensions of employee relations and process management are directly related to the health-care and non-health-care performance of public hospitals.

It explores the relationship between QM practices and hospital performance based on empirical results from Chinese public hospitals, whereas few studies have been conducted within the context of public health-care sectors in developing countries. The empirical results could enhance hospital managers’ understanding of the nature of QM practice-performance relationship and help mangers re-allocate more resources to those elements of the QM systems that have the most significant impact on hospital performance.

The purpose of this paper is to present a novel n‐buried partial silicon‐on‐nothing (SON) structure of radio frequencies (RF) power lateral double‐diffused metal‐oxide‐semiconductor (LDMOS) and analyze its RF characteristics.

The small‐signal equivalent circuit for RF power LDMOS method is used to analyze the proposed structure and the simulation and optimization are done using 2D simulator MEDICI.

This improved structure is clearly decreasing drain‐substrate parasitic capacitance. At 1 dB compression point, its output power, the power‐added efficiency and the breakdown voltage is higher than that of the conventional LDMOS.

This paper usefully shows how SON having low‐dielectric constant can reduce the horizontal drain field and the drain‐substrate capacitance, and increase the breakdown voltage as a result.

The purpose of this paper is to present a novel n‐buried‐PSOI sandwiched radio frequencies (RF) power lateral diffused metal‐oxide semiconductor (LDMOS) and analyze its output characteristics.

The small‐signal equivalent circuit for RF power LDMOS method is used to analyze the proposed structure and the simulation and optimization are done using the computer‐aided design tools.

This improved structure is clearly decreasing drain‐substrate parasitic capacitance. At 1 dB compression point, its output power, the power‐added efficiency and the breakdown voltage are higher than that of the conventional LDMOS.

This paper puts forward a novel n‐buried‐PSOI sandwiched structure of RF power LDMOS. The analysis indicates that the output characteristics of this device are a great improvement on the conventional LDMOS and the n‐buried‐PSOI, RF power LDMOS proposed by earlier authors.