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1 – 3 of 3L. Mathivanan and S. Radhakrishna
This article presents a study of the major corrosion problems of steel structures in rubber and palm oil mill industries in Malaysia. Such structures, improperly coated with…
Abstract
This article presents a study of the major corrosion problems of steel structures in rubber and palm oil mill industries in Malaysia. Such structures, improperly coated with protective treatment (commercial coatings) were easily damaged by corrosion due to the environment within a month’s time. In order to prevent these types of corrosion problems, the epoxy‐silicone resin based paints were developed. The performance of the coatings were evaluated. These studies confirm the fact that the epoxy‐silicone coatings are effectively useful for protection of steel structures in these industries for considerably longer times.
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Jian‐Wei Hoon, Kah‐Yoong Chan and Teck‐Yong Tou
The purpose of this paper is to share valuable information about metallization in microelectronic industries by implementing tungsten silicide (WSi) thin film materials.
Abstract
Purpose
The purpose of this paper is to share valuable information about metallization in microelectronic industries by implementing tungsten silicide (WSi) thin film materials.
Design/methodology/approach
Direct current plasma magnetron sputtering technique was employed for the WSi film growth. Different sputtering parameters were investigated, and the WSi films were characterized using four‐point probe electrical measurement method.
Findings
The experimental results reveal that the sputtering parameters such as deposition pressure and substrate temperature exert significant influence on the electrical properties of the WSi films.
Research limitations/implications
By tuning the sputtering parameters, the electrical properties of the WSi films can be optimized and the film resistivity can be reduced significantly.
Practical implications
The investigation results presented in this paper are useful information for microelectronic industries in the area of microelectronic devices metallization.
Originality/value
The fabrication method described in this paper allows fabricating low‐resistivity WSi films by employing a lower deposition pressure and a lower substrate temperature.
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Jegenathan Krishnasamy, Kah‐Yoong Chan and Teck‐Yong Tou
The purpose of this paper is to address the influence of deposition process parameters. The substrate heating mechanisms are also discussed.
Abstract
Purpose
The purpose of this paper is to address the influence of deposition process parameters. The substrate heating mechanisms are also discussed.
Design/methodology/approach
Deposition duration, sputtering power, working gas pressure, and substrate heater temperature on substrate heating in the direct current (DC) magnetron sputtering deposition process were investigated.
Findings
Results from the experiments show that, in DC magnetron sputtering deposition process, substrate heating is largely influenced by the process parameters and conditions.
Originality/value
This paper usefully demonstrates that substrate heating effects can be minimized by adjusting and selecting the proper sputtering process parameters; the production cost can be reduced by employing a higher sputtering power, lower working gas pressure and shorter deposition duration.
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