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Article
Publication date: 1 October 1998

L. Mathivanan and S. Radhakrishna

This article presents a study of the major corrosion problems of steel structures in rubber and palm oil mill industries in Malaysia. Such structures, improperly coated with…

Abstract

This article presents a study of the major corrosion problems of steel structures in rubber and palm oil mill industries in Malaysia. Such structures, improperly coated with protective treatment (commercial coatings) were easily damaged by corrosion due to the environment within a month’s time. In order to prevent these types of corrosion problems, the epoxy‐silicone resin based paints were developed. The performance of the coatings were evaluated. These studies confirm the fact that the epoxy‐silicone coatings are effectively useful for protection of steel structures in these industries for considerably longer times.

Details

Anti-Corrosion Methods and Materials, vol. 45 no. 5
Type: Research Article
ISSN: 0003-5599

Keywords

Article
Publication date: 10 May 2011

Jian‐Wei Hoon, Kah‐Yoong Chan and Teck‐Yong Tou

The purpose of this paper is to share valuable information about metallization in microelectronic industries by implementing tungsten silicide (WSi) thin film materials.

282

Abstract

Purpose

The purpose of this paper is to share valuable information about metallization in microelectronic industries by implementing tungsten silicide (WSi) thin film materials.

Design/methodology/approach

Direct current plasma magnetron sputtering technique was employed for the WSi film growth. Different sputtering parameters were investigated, and the WSi films were characterized using four‐point probe electrical measurement method.

Findings

The experimental results reveal that the sputtering parameters such as deposition pressure and substrate temperature exert significant influence on the electrical properties of the WSi films.

Research limitations/implications

By tuning the sputtering parameters, the electrical properties of the WSi films can be optimized and the film resistivity can be reduced significantly.

Practical implications

The investigation results presented in this paper are useful information for microelectronic industries in the area of microelectronic devices metallization.

Originality/value

The fabrication method described in this paper allows fabricating low‐resistivity WSi films by employing a lower deposition pressure and a lower substrate temperature.

Details

Microelectronics International, vol. 28 no. 2
Type: Research Article
ISSN: 1356-5362

Keywords

Article
Publication date: 11 May 2010

Jegenathan Krishnasamy, Kah‐Yoong Chan and Teck‐Yong Tou

The purpose of this paper is to address the influence of deposition process parameters. The substrate heating mechanisms are also discussed.

Abstract

Purpose

The purpose of this paper is to address the influence of deposition process parameters. The substrate heating mechanisms are also discussed.

Design/methodology/approach

Deposition duration, sputtering power, working gas pressure, and substrate heater temperature on substrate heating in the direct current (DC) magnetron sputtering deposition process were investigated.

Findings

Results from the experiments show that, in DC magnetron sputtering deposition process, substrate heating is largely influenced by the process parameters and conditions.

Originality/value

This paper usefully demonstrates that substrate heating effects can be minimized by adjusting and selecting the proper sputtering process parameters; the production cost can be reduced by employing a higher sputtering power, lower working gas pressure and shorter deposition duration.

Details

Microelectronics International, vol. 27 no. 2
Type: Research Article
ISSN: 1356-5362

Keywords

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