Influence of process parameters on the substrate heating in direct current plasma magnetron sputtering deposition process

Abstract

Purpose

The purpose of this paper is to address the influence of deposition process parameters. The substrate heating mechanisms are also discussed.

Design/methodology/approach

Deposition duration, sputtering power, working gas pressure, and substrate heater temperature on substrate heating in the direct current (DC) magnetron sputtering deposition process were investigated.

Findings

Results from the experiments show that, in DC magnetron sputtering deposition process, substrate heating is largely influenced by the process parameters and conditions.

Originality/value

This paper usefully demonstrates that substrate heating effects can be minimized by adjusting and selecting the proper sputtering process parameters; the production cost can be reduced by employing a higher sputtering power, lower working gas pressure and shorter deposition duration.

Citation

Krishnasamy, J., Chan, K. and Tou, T. (2010), "Influence of process parameters on the substrate heating in direct current plasma magnetron sputtering deposition process", Microelectronics International, Vol. 27 No. 2, pp. 75-78. https://doi.org/10.1108/13565361011034740