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Assess the situation: try to stand away from the details. Get a view of the total situation. Do not act hastily. Obtain facts and feelings from those involved. Do not take sides. Maintain an independent identity.

Cable clamp ammeters have long been used to read current in single wires and unbalanced currents in twin cables and the like. When reading around a twin cable, a twin and earth house wiring cable for example, the reading progressively diminishes the more equal the currents are in the line and neutral wires. Once the currents are actually in balance (the fault free condition) then the meter will read zero.

WE MAKE no apology for once again returning to the theme we have been expounding of late: that there is no need to fear the mini‐micro revolution.

As the International Year of Disabled People draws to an end what has been happening in the high street? What changes have been made in attitudes and design policies to accommodate the needs of so‐called disabled people? In a wide‐ranging review RDM discovered that there's little or no legislation to tie the hands of the planners, developers, designers and shop owners, and that while there was an air of optimism among disabled groups, only in exceptional cases was there contact between such groups and shop owners.

The benefits of the thin film multichip module (MCM‐D) approach to high density packaging for VLSI devices have now been amply demonstrated by a number of research groups. The successful emergence of a viable multichip module industry from this research base will, however, depend upon the installation of an industry‐wide manufacturing infrastructure. This will have to provide the necessary range of concurrent design capabilities, make pretested bare die available, and include multichip module vendors who can offer an integrated capability in module design, substrate layout and manufacture, advanced module assembly, packaging and test. Each of these areas of MCM‐D technology merits detailed attention in its own right, sufficient to justify many individual papers and presentations. This present paper focuses on just one of these topics and addresses the approach taken by GEC Plessey Semiconductors (GPS) to the development and control of a highly manufacturable MCM‐D silicon substrate process. The GPS ‘Process I’ four‐layer metal, aluminium‐polyimide substrate technology is described, the technology development and process control test structures are detailed and process characterisation data presented.