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Article
Publication date: 1 August 2016

Kesheng Zuo, Haitao Zhang, Ke Qin and Jianzhong Cui

The purpose of this paper is to study the effect of feeding scheme on melt flow and temperature field during the steady-state of level-pour direct-chill (DC) casting of A390 alloy…

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Abstract

Purpose

The purpose of this paper is to study the effect of feeding scheme on melt flow and temperature field during the steady-state of level-pour direct-chill (DC) casting of A390 alloy hollow billet and optimize the design of feeding scheme.

Design/methodology/approach

Melt flow and temperature field are investigated by numerical simulation, which is based on a three-dimensional mathematical model and well verified by experiments.

Findings

The numerical results reveal that both melt flow and temperature field are obviously affected by the feeding scheme. The homogeneity of melt flow and temperature field in hollow billet with the feeding scheme of modified four inlets are better than the other feeding schemes. Experimental results show that crack can be eliminated by increasing the number of feeding inlets. The primary Si size appears unaffected while the distribution of primary Si particles is highly affected by the change of feeding scheme. Only with the feeding scheme of modified four inlets can fine and uniformly distributed primary Si particles be achieved.

Practical implications

The paper includes implications for the design of feeding scheme in level-pour DC casting of hollow billet for practical use.

Originality/value

This paper develops different feeding schemes for level-pour DC casting of hollow billet and optimizes the design of feeding scheme.

Details

International Journal of Numerical Methods for Heat & Fluid Flow, vol. 26 no. 6
Type: Research Article
ISSN: 0961-5539

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Article
Publication date: 5 June 2020

Kesheng Lin, Jie Liu, Jia-Min Wu, Yunlong Sun, Feng Li, Yan Zhou and Yusheng Shi

The main cause of aseptic inflammation after an in vivo implantation is that Poly(L-lactide) (PLLA) and Poly(D-lactide) have a slower degradation and absorption rate, while…

270

Abstract

Purpose

The main cause of aseptic inflammation after an in vivo implantation is that Poly(L-lactide) (PLLA) and Poly(D-lactide) have a slower degradation and absorption rate, while Poly(D, L-lactide) (PDLLA) has a much faster degradation rate than PLLA because of its amorphous structure. Also, the hydrolyzate of Hydroxyapatite (HA) is alkaline, which can neutralize local tissue peracid caused by hydrolysis of Polylactic acid.

Design/methodology/approach

In this study, the selective laser sintering (SLS) technique was chosen to prepare bone scaffolds using nano-HA/PDLLA composite microspheres, which were prepared by the solid-in-oil-in-water (S/O/W) method. First, the SLS parameters range of bulk was determined by the result of a single-layer experiment and the optimized parameters were then obtained by the orthogonal experiment. The tensile property, hydrophobicity, biocompatibility, biological toxicity and in vitro degradation of the samples with optimized SLS parameters were characterized.

Findings

As a result, the samples showed a lower tensile strength because of the many holes in their interior, which was conducive to better cell adhesion and nutrient transport. In addition, the samples retained their inherent properties after SLS and the hydrophobicity was improved after adding nano-HA because of the OH group. Furthermore, the samples showed good biocompatibility with the large number of cells adhering to the material through pseudopods and there was no significant difference between the pure PDLLA and 10% HA/PDLLA in terms of biological toxicity. Finally, the degradation rate of the composites could be tailored by the amount of nano-HA.

Originality/value

This study combined the S/O/W and SLS technique and provides a theoretical future basis for the preparation of drug-loaded microsphere scaffolds through SLS using HA/PDLLA composites.

Details

Rapid Prototyping Journal, vol. 26 no. 6
Type: Research Article
ISSN: 1355-2546

Keywords

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