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This paper aims to develop thermal analysis method of thermal joints characterization. The impact on convection on thermal resistance analysis with use thermography for silver-based thermal joints were investigated for non-metallized and metalized semiconductor surfaces. Heat transfer efficiency depends on thermal conductivity; radiation was used to perform thermographic analysis; the convection is energy loss, so its removing might improve measurements accuracy.

Investigation of thermal joints analysis method was focused on determination of convection impact on thermal resistance thermographic analysis method. Measuring samples placed in vacuum chamber with lowered pressure requires transparent window for infrared radiation that is used for thermographic analysis. Impact of infrared window and convection on temperature measurements and thermal resistance were referred.

The results showed that the silicon window allowed to perform thermal analysis through, and the convection was heat transfer mode which create 15% energy loss.

It is possible to measure thermal resistance for silver-based thermal joints with convection eliminated to improve measurements accuracy.

This paper aims to perform thermal and mechanical characterization for silver-based sintered thermal joints. Layer quality affects thermal and mechanical performance, and it is important to achieve information about how materials and process parameters influence them.

Thermal investigation of the thermal joints analysis method was focused on determination of thermal resistance, where temperature measurements were performed using infrared camera. They were performed in two modes: steady-state analysis and dynamic analysis. Mechanical analysis based on measurements of mechanical shear force. Additional characterizations based on X-ray image analysis (image thresholding), optical microscope of polished cross-section and scanning electron microscope image analysis were proposed.

Sample surface modification affects thermal resistance. Silver metallization exhibits the lowest thermal resistance and the highest mechanical strength compared to the pure Si surface. The type of dynamic analysis affects the results of the thermal resistance.

Investigation of the layer quality influence on mechanical and thermal performance provided information about different joint types.

The purpose of this paper is to analyze the individual steps during the printing of capacitor structures. The method of substrate preparation, the obtained roughness of conductive and dielectric layers are examined. Moreover, the capacitances of the obtained capacitors were examined.

Surface roughness and microscopic analysis were used to assess the quality of printed conductive structures. Two criteria were used to assess the quality of printed dielectric structures: the necessary lack of discontinuity of layers and minimal roughness. To determine the importance of printing parameters, a draft experimental method was proposed.

The optimal way to clean the substrate has been determined. The most important parameters for the dielectric layer (i.e. drop-space, table temperature, curing time and temperature) were found.

If dielectric layers are printed correctly, most problems with printing complex electronic structures (transistors, capacitors) will be eliminated.

The tests performed identified the most important factors for dielectric layers. Using them, capacitors of repeatable capacity were printed.

In the literature on this subject, no factors were found which were responsible for obtaining homogeneous dielectric layers.

This paper aims to find proper technological parameters of low-temperature joining technique by silver sintering to eventually use this technique for reliable electronic packaging.

Based on the literature and author’s own experience, the factors influencing the nanosized Ag particle sintering results were identified, and their significance was assessed.

It has been shown that some important technological parameters clearly influence the quality of the joints, and their choice is unambiguous, but the meaning of some parameters is dependent on other factors (interactions), and they should be selected experimentally.

The value of this research is that the importance of all technological factors was analyzed, which makes it easy to choose the technological procedures in the electronic packaging.

The low-temperature co-fired ceramics (LTCC) microfluidic-microwave devices fabrication requires careful consideration of two main factors: the accuracy of deposition of conductive paths and the modification needed to the standard process of the LTCC technology. Neither of them are well-described in the literature.

The first part of this paper deals with the individual impact of screen parameters such as aperture, photosensitive emulsion thickness and mounting angle on the precision of the screen-printed conductive paths fabrication. For the quantitative analysis purposes, the design of experiment method with Taguchi orthogonal array and analysis of variance was used. The second part contains the characterization of the complex permittivity measured for different values of LTCC substrates lamination pressure.

It can be concluded, that the combination of aperture, equal to 24 µm, emulsion thickness 20 µm and mounting angle 22.5° ensures the highest quality of printed conductive metallization. Furthermore, the obtained results indicate, that the modification of the lamination pressure does not affect significantly the dielectric parameters of the LTCC substrates.

This paper shows two aspects of the fabrication of the microfluidic-microwave LTCC devices. First, the resolution of the applied metallization is critical in manufacturing high-frequency structures. The obtained experimental results have shown that optimal screen parameters, in terms of conductive pattern quality, can be found. Second, the received outcomes indicate that the changes in the lamination pressure do not affect significantly the electrical parameters of the substrate. Hence, this effect does not need to be taken into account.