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1 – 3 of 3G.V. Gadiyak, J.L. Korobitsina and V.I. Kramarenko
The model of the thermal oxidation of polycrystalline silicon is described. It includes parabolic equation system for the diffusion process of oxidant in polycrystalline oxide…
Abstract
The model of the thermal oxidation of polycrystalline silicon is described. It includes parabolic equation system for the diffusion process of oxidant in polycrystalline oxide, equations system for the deformation of oxide and nitride mask. The numerical calculations of the reverse L‐shape sealed polybuffer LOCOS are presented.
G.V. Gadiyak, J.L. Korobitsina and V.I. Kranarenko
Computer code complex for the thermal oxidation of silicon is presented. There are one‐dimensional model and two‐ dimensional models:the model of viscoelastic oxide and the…
Abstract
Computer code complex for the thermal oxidation of silicon is presented. There are one‐dimensional model and two‐ dimensional models:the model of viscoelastic oxide and the hydrodynamical models — an ideal fluid and a viscous fluid models. If nitride mask is absent, a one‐dimensional model is used.The influence of an induced stress on the diffusion and reaction is taken into account.
A.L. Alexsandrov, P.A. Androsenko, V.M. Bedanov, A.M. Bekesheva, E.E. Dagnan, O.E. Dnitrieva, G.V. Gadiyak, V.P. Ginkin, M.S. Ivanov, Zh.L. Korobitsina, T.M. Lukhanova, M.S. Obrekht, A.A. Shinanskiy, V.A. Schveigert, I.V. Schveigert, E.G. Tishkovsky and Yu.P. Zhydkov
In this paper the MOPIT system for the simulation of devices and manufacturing processes is presented. The MOPIT system is meant for the simulation of the following semiconductor…
Abstract
In this paper the MOPIT system for the simulation of devices and manufacturing processes is presented. The MOPIT system is meant for the simulation of the following semiconductor processing : ion implantation of impurities , diffusion , radiation enhanced diffusion , thermal oxidation of silicon , molecular‐beam epitaxy, plasma‐chemical etching and deposition, cross‐sectional profile evolution of trench in plasma‐etching and deposition; as well as the following devices: MOS‐structures , high‐voltage diode, element of memory, charge accumulation in a sub‐gate dielectric.