COMPEL - The international journal for computation and mathematics in electrical and electronic engineering: Volume 11 Issue 4

ACCURATE AND COMPUTATIONALLY EFFICIENT MODELING OF ION IMPLANTATION IN SINGLE‐CRYSTAL SILICON

Al F. Tasch

This paper describes a modeling strategy and the model development for predicting ion implanted impurity distributions in single‐crystal silicon. Both a computationally efficient…

THE EFFECT OF A SCREENING OXIDE ON ION IMPLANTATION STUDIED BY MONTE CARLO SIMULATIONS

G. Hobler, H. Pötzl

The effect of a screening oxide layer on 1‐D and 2‐D ion implantation profiles in silicon is investigated using Monte Carlo simulations. Experimental observations of profile…

A MODEL FOR TRANSIENT IMPACT IONISATION

DC Herbert

A model for impact ionisation allowing for the spatial transient is described. Ionisation rates and phonon scattering rates are adjusted to fit experimental data. To reduce some…

NUMERICAL SIMULATION OF THE THERMAL OXIDATION OF SILICON

G.V. Gadiyak, J.L. Korobitsina, V.I. Kranarenko

Computer code complex for the thermal oxidation of silicon is presented. There are one‐dimensional model and two‐ dimensional models:the model of viscoelastic oxide and the…

Selection of Optimal Meshes for the Solution of Nonlinear Dopant Diffusion Problems

Ke CHEN

In this paper we investigate the optimal choice of rectangular meshes for the solution of nonlinear dopant diffusion problems in semiconductor process modelling. Firstly we show…

MOPIT: OPEN SYSTEM FOR DEVICE AND TECHNOLOGY SIMULATION

A.L. Alexsandrov, P.A. Androsenko, V.M. Bedanov, A.M. Bekesheva, E.E. Dagnan, O.E. Dnitrieva, G.V. Gadiyak, V.P. Ginkin, M.S. Ivanov, Zh.L. Korobitsina, T.M. Lukhanova, M.S. Obrekht, A.A. Shinanskiy, V.A. Schveigert, I.V. Schveigert, E.G. Tishkovsky, Yu.P. Zhydkov

In this paper the MOPIT system for the simulation of devices and manufacturing processes is presented. The MOPIT system is meant for the simulation of the following semiconductor…

A COMPARISON OF THE TRANSMISSION COEFFICIENT AND THE WIGNER FUNCTION APPROACHES TO FIELD EMISSION

K.L. Jensen, A.K. Ganguly

Standard treatments of the field emission problem typically rely on approximations to the evaluation of the Transmission Coefficient (TC). Recently, the Wigner Distribution…

INCLUSION OF ELECTRON‐PLASMON SCATTERING IN ENSEMBLE MONTE CARLO SIMULATIONS

Nabil S. Mansour, Kevin F. Brennan

We compare two approaches of incorporating the long‐range Coulomb electron‐electron interaction into Monte Carlo simulations of bulk, degenerate GaAs, i.e., the semi‐classical…

INFLUENCE OF FORWARD SCATTERING ON NONEQUILIBRIUM TRANSPORT OF ELECTRONS IN COMPOUND SEMICONDUCTORS

Ming‐C. Cheng

Influence of forward scattering, including ionized‐impurity and polar optical‐phonon scattering, on electron transport phenomena in a 3‐valley n‐type GaAs model subjected to a…

EFFECTS OF LATTICE TEMPERATURE IN MOSFET ANALYSIS UNDER NON‐ISOTHERMAL CONDITIONS

Hirokazu Hayashi, Ryo Dang

Effects of lattice temperature on MOSFET characteristics and a rough distribution of carrier temperature, are studied using a non‐isothermal device simulator which also includes…

IMPLEMENTATION OF A HYDRODYNAMIC TRANSIENT MODEL FOR SIMULATING HIGH SPEED PHOTODETECTORS

Z.‐M. Li, K.‐W. Chai, S.P. McAlister, J. Simmons

We have implemented a two‐dimensional (2D) time‐dependent hydrodynamic model suitable for studying III‐V heterostructural semiconductor devices. This we apply in simulating a…

SIMULATION OF INTERFACE COUPLING EFFECTS IN ULTRA—THIN SILICON ON INSULATOR MOSFET's

A. Hassein—Bey, S. Cristoloveanu

Recent progress in silicon—on—insulator (SOI) technologies has made possible the fabrication of high quality ultra—thin film structures. Preliminary research has demonstrated the…

Coupled device‐circuit simulation using energy‐momentum device models

MICHAEL SEVER

The use of energy‐momentum models for carrier transport is considered in the context of coupled device‐circuit simulation. We point out that certain computational methods for…

TIME AND FREQUENCY DOMAIN NUMERICAL PHYSICAL MODELLING OF TWO TERMINAL MICROWAVE NON LINEAR CIRCUITS APPLIED TO MILLIMETER‐WAVE AVALANCHE DIODE FREQUENCY MULTIPLIERS

C. DALLE, M.R. FRISCOURT, P.A. ROLLAND

Time and frequency domain complementary numerical models of microwave non‐linear circuits using two‐terminal active semiconductor devices are presented. Their main feature is the…

SIGNAL DELAY FOR GENERALLY INTERCONNECTED DISTRIBUTED STRUCTURES

CORNELIU A. MARINOV, JUKKA‐PEKKA SANTANEN

A network composed by RC distributed parameter lines with resistively grounded nodes is considered. Upper and lower bounds for the transient voltages are inferred. The results are…

Fast models for statistical process/device simulation

Andrzej Pfitzner, Miroslaw Grygolec

A new method for statistical process/device modeling has been developed and applied to determine the impurty profiles and the current‐voltage characteristics of the p‐n junction…