High performance of quantum dots light-emitting diodes based on double transparent electrodes
Abstract
Purpose
The purpose of this paper is to find an effective route to fabricate high transparent top electrode in quantum dots light-emitting diodes (QLEDs).
Design/methodology/approach
Al-doped ZnO (AZO) top cathode with high transparency have been deposited by an atomic layer deposition (ALD) method at 140°C for 1 h. The products are studied by UV-vis spectrometer and atomic force microscopy (AFM). The electroluminescence spectra of QLED are recorded using an Ocean Optics high-resolution spectrometer (HR4000). The devices were measured under ambient conditions without encapsulation.
Findings
The AZO-based QLED shows excellent performance with high luminance and current efficiency.
Originality/value
The AZO obtained by ALD method is a promising cathode candidate for application in QLEDs.
Keywords
Acknowledgements
This work was financially supported by the Key Scientific Research Project of Henan Province Funded Plan (Grant No. 18A150052).
Citation
Li, Z. (2018), "High performance of quantum dots light-emitting diodes based on double transparent electrodes", Microelectronics International, Vol. 35 No. 4, pp. 215-219. https://doi.org/10.1108/MI-09-2017-0047
Publisher
:Emerald Publishing Limited
Copyright © 2018, Emerald Publishing Limited