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1 – 3 of 3Yulan Zheng, John Atkinson, Zhige Zhang and Russ Sion
Results are presented from a programme of research aimed at establishing the mechanisms behind the effects of fabrication parameter variation on the performance of thick film…
Abstract
Results are presented from a programme of research aimed at establishing the mechanisms behind the effects of fabrication parameter variation on the performance of thick film strain gauges on steel substrates. The research is aimed at describing the effect on the repeatability of the device characteristics due to different choices of materials, thicknesses of printed layers, firing regimes and geometry of the gauges. In particular the effects of load and temperature on the offset and gain characteristics of a variety of different sensor constructions have been explored. The sensors described here are of a type where the applied strain is parallel to the measured resistance path but orthogonal to the substrate (k33). It has been found that these devices exhibit different characteristics to conventional thick film strain gauges that can help explain the mechanisms affecting gain and offset changes caused by temperature fluctuations and mechanical deformation.
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Yulan Zheng, John Atkinson, Zhige Zhang and Russ Sion
Novel thick film strain gauges have been constructed using a z‐axis orientation on insulated stainless steel for a variety of force sensing applications. These devices exhibit…
Abstract
Novel thick film strain gauges have been constructed using a z‐axis orientation on insulated stainless steel for a variety of force sensing applications. These devices exhibit high gauge factor and good thermal stability compared with conventional x‐axis devices and offer other mechanical advantages due to their mode of operation. The work reported here investigates the characteristics of different types of stainless steel substrate and different types of insulating material used in the construction of the sensors. Both ferritic and austenitic steels have been investigated, together with different resistive and insulative compositions. The temperature coefficient of resistance of the devices has been shown to be a complex function of device thickness, surface area and the difference between the thermal coefficients of expansion of the various materials employed.
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