Search results

The purpose of this paper is to describe the application of low‐glitch current cell in a digital to analog converter (DAC) to reduce the clock‐feedthrough effect and achieve a low power consumption.

A low‐glitch current switch cell is applied in a ten‐bit two‐stage DAC which is composed of a unary cell matrix for six most significant bits and a binary weighted array for four least significant bits (LSBs). The current cell is composed of four transistors to neutralize the clock‐feedthrough effect and it enables DAC to operate in good linearity and low power consumption. The prototype DAC is being implemented in a 0.35μm complementary metal‐oxide semiconductor process. The reduction in glitch energy and power consumption has been realized by preliminary experiment and simulation.

Compared to conventional current cell, more than 15 per cent reduction of glitch energy has been obtained in this work. The DAC is estimated that differential nonlinearity is within 0.1 LSB and the maximum power consumption is 68 mW at the sampling frequency of 100 MHz.

Comparison with other conventional work indicates that the current cell proposed in this paper shows much better performance in terms of switching spike and glitch, which may come from the extra dummy transistor in cell and reduce the clock‐feedthrough effect.

The purpose of this paper is to present a fully integrated power converter. A stacked spiral inductor is applied in a voltage‐mode CMOS DC‐DC converter for the chip miniaturization and low‐power operation.

The three‐layer spiral inductor is simulated with an equivalent circuit and applied to the DC‐DC converter. The DC‐DC buck converter has been fabricated with a standard 0.35 μm CMOS process. The power converter is measured in both experiment and simulation in terms of frequency and electrical characteristics.

Experimental results show that the converter with the stacked spiral inductor operates properly with the inductance of 7.6 nH and mW power range. The measured inductance of the stacked spiral inductor is found to be almost half of the circuit designed value because of the parasitic resistances and capacitances in the spiral inductor.

This paper first introduces the application of the integrated stacked spiral inductor in DC‐DC buck converter for display driver circuit, which requires a low‐power operation. It also shows the fully integrated DC‐DC converter for chip miniaturization.

The purpose of this paper is to present the design and optimization of a comparator with two transistors.

The effect of back‐gate bias in MOSFET is analyzed and applied to a comparator circuit in a flash‐type A/D converter (ADC). The 4‐bit flash ADC is simply structured by change of comparator block based on CMOS latch with pMOSFET switch. The back‐gate bias on MOSFET changes the threshold voltage and provides for a CMOS inverter to shift the voltage transfer characteristics. In the new type comparator, the variation of turn‐on voltage is controlled within 0.1 V in 4‐bit ADC. The fabrication is done in a 0.35 μm single‐poly four‐metal process.

Layout simulation shows that INL is within 0.3 LSB and SNDR is 25.4 dB at input frequency of 20 KHz and sampling rate of 4 MS/s. The 0.26 × 0.43 mm 2 ADC dissipates 1.2 mW at supply voltage of 3.3 V.

A comparator which uses the effect of the back‐gate bias on MOSFET is applied to a flash ADC. The paper is of value in showing how the circuit of this comparator is quite simple compared with a conventional comparator based on a CMOS latch, which is adaptable for a low‐power analog circuit in future. The experimental output of the 4‐bit flash ADC shows a good agreement with a simulation. Power consumption 1.2 mW, INL 0.2 LSB, and SNDR 25 dB are obtained in the simulation study.