Y. Sorimachi, I. Tsubata and S. Miyauchi
A thick film overcurrent protector with self‐recovery has been developed using carbon black graft polymer. Carbon black graft polymer, henceforth called CG, is a thick film PTC…
Abstract
A thick film overcurrent protector with self‐recovery has been developed using carbon black graft polymer. Carbon black graft polymer, henceforth called CG, is a thick film PTC thermistor material in which a polymer forms a three‐dimensional network structure around carbon blacks by graft‐copolymerising vinyl monomers. Since the CG material gives a large and stable positive temperature coefficient of resistance depending on the copolymer material, due to the difference of thermal expansion coefficient between carbon blacks and polymer, the stable thick film overcurrent protector with self‐recovery can be realised by using the CG material. The overcurrent protector utilises the dynamic current‐time characteristics of the CG element. When a very large current flows through the CG element, the temperature rises by self‐heating, and the resistance of the element increases dramatically; as a result it restrains the current at a lower level. Since this element is not destroyed after excess current flow, it can be used repeatedly, unlike a metal fuse. In this paper, the manufacturing process and thermal and electrical characteristics of the CG overcurrent protector are investigated, including an analysis of these characteristics.
H. Binner, J. Lantairès, B.C. Waterfield, e dr and K.J. Williams
Dates: 29–31 May 1991 Venue: De Doelen Conference Centre, Rotterdam, The Netherlands The Benelux Chapter of the International Society for Hybrid Microelectronics will be…
Abstract
Dates: 29–31 May 1991 Venue: De Doelen Conference Centre, Rotterdam, The Netherlands The Benelux Chapter of the International Society for Hybrid Microelectronics will be organising the 8th European Microelectronics Conference. The event will take place at ‘De Doelen’, Rotterdam, The Netherlands, from 29 to 31 May 1991.
H. Binner, H.T. Law, N. Sinnadurai, G. Jones and P.E. Ongley
Following the discussion at our recent Annual General Meeting, a questionnaire was sent out to all members. Almost half of them replied despite the fact that the time allowed for…
Abstract
Following the discussion at our recent Annual General Meeting, a questionnaire was sent out to all members. Almost half of them replied despite the fact that the time allowed for returning the questionnaire had been kept very short. Some members even provided detailed comments.
T. Kwikkers, J. Lantaires, R.B. Turnbull, H.T. Law, Barry George and Dave Savage
On 20 April ISHM‐Benelux held its 1988 Spring meeting at the Grand Hotel Heerlen. This meeting was totally devoted to implantable devices, in particular to the technologies used…
Abstract
On 20 April ISHM‐Benelux held its 1988 Spring meeting at the Grand Hotel Heerlen. This meeting was totally devoted to implantable devices, in particular to the technologies used for these high reliability, extremely demanding devices. For this meeting ISHM‐Benelux was the guest of the Kerkrade facility of Medtronic. Medtronic (headquartered in Minneapolis, USA) is the world's leading manufacturer of implantable electronic devices. Apart from the assembly of pacemakers and heart‐wires, the Kerkrade facility acts as a manufacturing technology centre for Medtronic's European facilities.
Abstract
A superconducting material with the composition YBa1.8Pb0.2Cu3O7 was synthesised. The influence of PbO addition on the sintering and formation of the superconducting compound YBa2Cu3O7 was investigated. A thick film paste, prepared from prereacted material and an organic vehicle, was fired on Al2O3 and ZrO2 substrates. The resistivity of samples on ZrO2 substrates decreased to zero around 90 K, while samples on Al2O3 substrates did not reach zero resistivity until 77 K, which is probably due to the differences in thermal expansion coefficient between Al2O3 and the superconducting material. Interactions between Pt alloy based thick film conductors and superconducting material were studied.
Cem Onat, Melin Şahin and Yavuz Yaman
The purpose of this paper is to detail the design of a fractional controller which was developed for the suppression of the flexural vibrations of the first mode of a smart beam.
Abstract
Purpose
The purpose of this paper is to detail the design of a fractional controller which was developed for the suppression of the flexural vibrations of the first mode of a smart beam.
Design/methodology/approach
During the design of the fractional controller, in addition to the classical control parameters such as the controller gain and the bandwidth; the order of the derivative effect was also included as another design parameter. The controller was then designed by considering the closed loop frequency responses of different fractional orders of Continued Fraction Expansion (CFE) method.
Findings
The first, second, third and fourth order approximations of CFE method were studied for the performance analysis of the controller. It was determined that the increase in the order resulted in better vibration level suppression at the resonance. The robustness analysis of the developed controllers was also conducted.
Practical implications
The experimentally obtained free and forced vibration results indicated that the increase in the order of the approximations yielded better performance around the first flexural resonance region of the smart beam and proved to yield better performance than the classical integer order controllers.
Originality/value
Evaluation of the performance of a developed fractional controller was realized by using different approach orders of the CFE method for the suppression of the flexural vibrations of a smart beam.