Uses a streamline‐diffusion finite element method, specially designed for semiconductor device models, to simulate silicon MESFET devices in two space dimensions. Considers the…
Abstract
Uses a streamline‐diffusion finite element method, specially designed for semiconductor device models, to simulate silicon MESFET devices in two space dimensions. Considers the full hydrodynamic model, a simplified hydrodynamic model and drift‐diffusion model. The method, which reduces to the well‐known Scharfetter‐Gummel discretization for the conventional drift‐diffusion model in one space dimension, proves to be a robust numerical tool. It performs well also when the solution has layers of rapid variation across junctions which are not aligned with mesh lines. Makes comparisons for the different models. Finds a qualitative discrepancy between the solutions of the hydrodynamic model and the drift diffusion model. Observes a small difference, however, between the full and simplified hydrodynamic models.