Search results
1 – 2 of 2Adilah A. Wahab, Siti Aisah Bohari and Wei Chyi Sheng
The purpose of this paper is to examine the importance of contractual management (CM), process management (PM) and human management (HM) factors as critical success factors (CSFs…
Abstract
Purpose
The purpose of this paper is to examine the importance of contractual management (CM), process management (PM) and human management (HM) factors as critical success factors (CSFs) in Malaysian housing projects. Additionally, it delves into the moderating influence of knowledge sharing (KS) on the relationship between HM and project success.
Design/methodology/approach
This study used a survey-based instrument to collect data from a total of 133 G7 class contractors. The stratified sampling method was used for data collection. Subsequently, structural equation modeling with SmartPLS was used for model evaluation.
Findings
The findings of this study indicate that CM, PM and HM exhibit significant relationships with housing project success. Furthermore, the research reveals that KS acts as a moderator in the relationship between HM practices and the success of housing projects.
Research limitations/implications
Although this study identified a significant relationship in explaining CSFs for housing project success in Malaysia, it only considers internal CSFs such as CM, PM and HM. It is suggested that future research incorporate external factors such as political support, national policy, currency stability and industry structure to provide a more comprehensive understanding of housing project success.
Originality/value
The results provide supportive evidence that CM, PM and HM are important CSFs in the success of housing projects. This finding is consistent with relational contractual theory, systems theory and social interaction theory. Moreover, the research underscores the nuanced impact of KS, serving as a moderating factor in the association between HM and project success. Consequently, these outcomes substantiate the applicability of the socialization, externalization, combination and internalization framework within the construction sector, particularly within the sphere of housing sector.
Details
Keywords
Nur Atiqah Hamzah, Mohd Ann Amirul Zulffiqal Md Sahar, Aik Kwan Tan, Mohd Anas Ahmad, Muhammad Fadhirul Izwan Abdul Malik, Chin Chyi Loo, Wei Sea Chang and Sha Shiong Ng
This study aims to investigate the effects of indium composition on surface morphology and optical properties of indium gallium nitride on gallium nitride (InGaN/GaN…
Abstract
Purpose
This study aims to investigate the effects of indium composition on surface morphology and optical properties of indium gallium nitride on gallium nitride (InGaN/GaN) heterostructures.
Design/methodology/approach
The InGaN/GaN heterostructures were grown on flat sapphire substrates using a metal-organic chemical vapour deposition reactor with a trimethylindium flow rate of 368 sccm. The indium composition of the InGaN epilayers was controlled by applying different substrate temperatures. The surface morphology and topography were observed using field emission scanning electron microscope (F.E.I. Nova NanoSEM 450) and atomic force microscopy (Bruker Dimension Edge) with a scanning area of 10 µm × 10 µm, respectively. The compositional analysis was done by Energy Dispersive X-Ray Analysis. Finally, the ultraviolet-visible (UV-Vis) spectrophotometer (Agilent Technology Cary Series UV-Vis-near-infrared spectrometer) was measured from 200 nm to 1500 nm to investigate the optical properties of the samples.
Findings
The InGaN/GaN thin films have been successfully grown at three different substrate temperatures. The indium composition reduced as the temperature increased. At 760 C, the highest indium composition was obtained, 21.17%. This result was acquired from the simulation fitting of ω−2θ scan on (0002) plane using LEPTOS software by Bruker D8 Discover. The InGaN/GaN shows significantly different surface morphologies and topographies as the indium composition increases. The thickness of InGaN epilayers of the structure was ∼300 nm estimated from the field emission scanning electron microscopy. The energy bandgap of the InGaN was 2.54 eV – 2.79 eV measured by UV-Vis measurements.
Originality/value
It can be seen from this work that changes in substrate temperature can affect the indium composition. From all the results obtained, this work can be helpful towards efficiency improvement in solar cell applications.
Details