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In this paper the MOPIT system for the simulation of devices and manufacturing processes is presented. The MOPIT system is meant for the simulation of the following semiconductor processing : ion implantation of impurities , diffusion , radiation enhanced diffusion , thermal oxidation of silicon , molecular‐beam epitaxy, plasma‐chemical etching and deposition, cross‐sectional profile evolution of trench in plasma‐etching and deposition; as well as the following devices: MOS‐structures , high‐voltage diode, element of memory, charge accumulation in a sub‐gate dielectric.

Numerical models of manufacturing processes are useful and provide insight for the practitioner; however, model verification and validation are a prerequisite for expedient application. This paper aims to detail the code-to-code verification of a thermal numerical model for the Bridgman solidification process of alloys in a two-dimensional axisymmetric domain, against an established commercial code (ANSYS Fluent); the work is considered a confidence building step in model development.

A grid sensitivity analysis is carried out to establish grid independence, and this is followed by simulations of two transient solidification scenarios: pulling rate step change and ramp input; the results of which are compared and discussed.

Good conformity of results is achieved; hence, the non-commercial model is code-to-code verified; in addition, the ability of the non-commercial model to deal with radial heat flow is demonstrated.

The ability of the home made model for Bridgman furnace solidification to deal with cases where significant radial heat transfer occurs in the sample was demonstrated. The introduction of front tracking to model the macroscopic growth of dendritic mush and the region of undercooled liquid is identified as the next step in model development.