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This paper aims to present the results of measurements and calculations illustrating mutual thermal coupling between power Schottky diodes made of silicon carbide situated in the common case.

The idea of measurements of mutual transient thermal impedances of the investigated device is described.

The results of measurements of mutual transient thermal impedances between the considered diodes are shown. The experimentally verified results of calculations of the internal temperature waveforms of the considered diodes obtained with mutual thermal coupling taken into account are presented and discussed. The influence of mutual thermal coupling and a self-heating phenomenon on the internal temperature of the considered diodes is pointed out.

The presented methods of measurements and calculations can be used for constructing the investigated diodes made of other semiconductor materials.

The presented results prove that mutual thermal coupling between diodes mounted in the common case must be taken into account to calculate correctly the waveforms of the device internal temperature.

This paper aims to investigate the sintering and solid liquid interdiffusion bonding (SLID) techniques to attach AlGaN/GaN-on-Si chips to direct bond copper (DBC) substrate. The influence of metal layers deposited on the backside of AlGaN/GaN-on-Si dies on the assembly process is also investigated.

The authors assumed the value of the shear strength to be a basic parameter for evaluation of mechanical properties. Additionally, the surface condition after shearing was assessed by SEM photographs and the shear surface was studied by X-ray diffraction method. The SLID requires Sn-plated DBC substrate and can be carried out at temperature slightly higher than 250°C and pressure reduced to 4 MPa, while the sintering requires process temperature of 350°C and the pressure at least 7.5 MPa.

Ag-, Au-backside covered high electron mobility transistor (HEMT) chips can be assembled on Sn-plated DBC substrates by SLID technology. In case of sintering technology, Cu- or Ag-backside covered HEMT chips can be assembled on Ag- or Ni/Au-plated DBC substrates. The SLID process can be realized at lower temperature and decreased pressure than sintering process.

For SLID technology, the adhesion between Cu-backside covered HEMT die and DBC with Sn layer loses its operational properties after short-term ageing in air at temperature of 300°C.

In the SLID process, Sn-Cu and Sn-Ag intermetallic compounds and alloys are responsible for creation of the joint between Sn-plated DBC and micropowder Ag layer, while the sintered joint between the chip and Ag-based micropowder is formed in diffusion process.

The purpose of this paper is a comparable evaluation of the influence of a particular element (Bi and Sb) added to Sn‐Ag‐Cu and Sn‐Zn alloys on their surface and interfacial tensions, as well as the wetting properties on the Cu substrate expressed by the wetting angle.

The authors applied the L₈ orthogonal Taguchi array to carry out the experiments and discussed the results using analysis of variance (ANOVA).

It was expected, on the base of previous studies, the decrease of the surface and interfacial tensions and thus improving wettability after the Bi and Sb addition to Sn‐Ag‐Cu and Sn‐Zn alloys. Unfortunately, the obtained results on the quinary Sn‐Ag‐Cu‐Bi‐Sb alloys and the quaternary Sn‐Zn‐Bi‐Sb alloys do not confirm these trends. The performed analyses suggest that the compositions of the quinary Sn‐Ag‐Cu‐Bi‐Sb alloys, as well as the quaternary Sn‐Zn‐Bi‐Sb alloys, do not have optimal compositions for practical application. The Cu, Bi and Sb elements in the case of the Sn‐Ag‐Cu‐Bi‐Sb alloys and the Zn, Bi and Sb elements in the case of the Sn‐Zn‐Bi‐Sb alloys show mutual interaction and, in consequence, there is no correlation between the tendency of the surface and interfacial tensions changes and the wettings of the Cu substrate.

It is suggested that further studies are necessary for the purpose of the practical application, but they should be limited mainly to the Sn‐Ag‐Cu‐Bi and the Sn‐Zn‐Bi alloys with the optimal compositions.

The performed analysis suggests that none of the investigated compositions of the quinary Sn‐Ag‐Cu‐Bi‐Sb alloys, as well as the quaternary Sn‐Zn‐Bi‐Sb alloys, have the optimal compositions for practical application.

The quickest way to determine which element of the alloy composition influences the surface tension and the wetting properties, and how, is to apply orthogonal analysis. After choosing the orthogonal array, the experiments were performed and analysis of variance (ANOVA) was used to perform the quantifiable analysis of the measured and calculated results of surface and interfacial tensions, as well as the wetting properties on the Cu substrate.

The purpose of our paper is to investigate thermal and mechanical properties of Ag sintered layers used for assembly of SiC diode to Direct Bonding Copper (DBC) interposer. How SiC devices are assembled to ceramic package defines efficiency of heat transfer and mechanical support.

Ag microparticles, sized 2-4 μm and flake shaped, were used as joining material. The parameters of sintering process were as follows: temperature 400°C, pressure 10 MPa and time 40 min. It was found that after sintering and long-term aging in air at 350°C the adhesion is in the range of 10 MPa, which is enough from a practical point of view. The thermal properties of the SiC die assembled into a ceramic package were also investigated. In the first step, the calibration of the temperature-sensitive parameter VF (IF = 2 mA) was done and the relation between VF and temperature was found. In the next step, the thermal resistance between junction and case was determined knowing junction and case temperature.

For SiC diode with Au bottom metallization joined to the DBC interposer by Ni/Au metallization by Ag microparticle layer, R_th j-c is in the range of 2-3.5°C/W, and for SiC diode with Ag bottom metallization joined to DBC interposer with Ag metallization by Ag microparticle layer, R_th j-c is in the range of 4.5-5.5°C/W.

In the future, research on thermal resistance of SiC diodes assembled onto the DBC interposer with Au and Ag metallization in the temperature range up to 350°C needs to be carried out. To do this, it necessary to find a solution for the attaches that leads to ceramic package able to work at such high temperature.

Obtained results are comparable with results mentioned by other studies for eutectic Au/Sn or SAC solder joints; however, the solution proposed by us can properly work at significantly higher temperatures.

The purpose of this paper is to propose a simple electrothermal model of GaN Schottky diodes, and its usefulness for circuit-level electrothermal simulation of laboratory-made devices is proved.

The compact electrothermal model of this device has the form of a subcircuit for simulation program with integrated circuit emphasis. This model takes into account influence of a change in ambient temperature in a wide range as well as influence of self-heating phenomena on dc characteristics of laboratory-made GaN Schottky diodes. The method of model parameters estimation is described.

It is shown that temperature influences fewer characteristics of GaN Schottky diodes than classical silicon diodes. The discussed model accurately describes properties of laboratory made GaN Schottky diodes. Additionally, the measured and computed characteristics of these diodes are shown and discussed.

The presented model together with the results of measurements and computations is dedicated only to laboratory-made GaN Schottky diodes.

The presented investigations show that characteristics of laboratory-made GaN Schottky diodes visibly change with temperature. These changes can be correctly estimated using the compact electrothermal model proposed in this paper. The correctness of this model is proved for four structures of such diodes characterised by different values of structure area and a different assembly process.

The purpose of this paper is to deal with material and technological aspects of SiC diodes assembly in ceramic packages. The usefulness of combinations of different materials and assembly techniques for the creation of inner connection system in the ceramic package, as well as the formation of outer connections able to work at temperatures up to 350°C, were evaluated.

The ceramic package consists of direct bonded copper (DBC) substrate with Cu pads electroplated by Ni or Ni/Au layers on which a SiC diode was assembled by sintering process using Ag microparticles. For the connections inside the ceramic package, the authors used Al/Ni and Au-Au material system based on aluminium or gold wire bonding. The authors sealed the ceramic package with glass encapsulation and achieved a full encapsulation. Outer connections were manufactured using Cu ribbon plated with Ag layer and sintered to DBC by Ag micro particle. The authors investigated the long-term stability of electrical parameters of SiC diodes assembled in ceramic package at temperature 350°C.

The authors have shown that Schottky and PiN SiC diodes assembled with different technologies and materials in ceramic package keep their I-V characteristics unchanged during ageing at 350°C for 400 h.

The SiC diodes assembled into ceramic package with Al/Ni or Au-Au inner electrical connection systems and outer connections system based on Ag microparticles sintering process of Cu/Ag ribbon to DBC substrate can work reliably in temperature range up to 350°C.

This paper aims to find proper technological parameters of low-temperature joining technique by silver sintering to eventually use this technique for reliable electronic packaging.

Based on the literature and author’s own experience, the factors influencing the nanosized Ag particle sintering results were identified, and their significance was assessed.

It has been shown that some important technological parameters clearly influence the quality of the joints, and their choice is unambiguous, but the meaning of some parameters is dependent on other factors (interactions), and they should be selected experimentally.

The value of this research is that the importance of all technological factors was analyzed, which makes it easy to choose the technological procedures in the electronic packaging.

The purpose of this paper is to develop and test the thermal interface materials (TIM) for application in assembly of semiconductor chips to package. Good adhesion properties (>5 MPa shear strength) and low thermal interface resistance (better than for SAC solders) are the goal of this research.

Mechanical and thermal properties of TIM joints between gold plated contacts of chip and substrate were investigated. Sintering technique based on Ag pastes was applied for purpose of this study. Performance properties were assessed by shear force tests and thermal measurements. Scanning electron microscopy was used for microstructural observations of cross-section of formed joints.

It was concluded that the best properties are achieved for pastes containing spherical Ag particles of dozens of micrometer size with flake shaped Ag particles of few micrometers size. Sintering temperature at 230°C and application of 1 MPa force on the chip during sintering gave the higher adhesion and the lowest thermal interface resistance.

The new material based on Ag paste containing mixtures of Ag particles of different size (form nanometer to dozens of microns) and shape (spherical, flake) suspended in resin was proposed. Joints prepared using sintering technique and Ag pastes at 230°C with applied pressure shows better mechanical and thermal than other TIM materials such as thermal grease, thermal gel or thermally conductive adhesive. Those material could enable electronic device operation at temperatures above 200°C, currently unavailable for Si-based power electronics.

The purpose of this paper is to design a novel die-attach composite joint for high-temperature die-attach applications based on transient liquid phase bonding. Moreover, the microstructure, shear strength, electrical property, thermal conductivity and aging property of the composite joint were investigated.

The composite joint was made of microporous copper and Cu₃Sn. Microporous copper was immersed into liquid Sn to achieve Sn-microporous copper composite structure for die attachment. By the thermo-compression bonding, the Cu₃Sn-microporous copper composite joint with a thickness of 100 µm was successfully obtained after bonding at 350 °C for 5 min under a low pressure of 0.6 MPa.

After thermo-compression bonding, the resulting interconnection could withstand a high temperature of at most 676 °C, with the entire Sn transforming into Cu₃Sn with high remelting temperatures. A large shear strength could be achieved with the Cu₃Sn-microporous copper in the interconnections. The formed bondlines demonstrated a good electrical and thermal conductivity owing to the large existing amount of copper in the interconnections. Furthermore, the interconnection also exhibited excellent reliability under high temperature aging at 300 °C.

This die-attach composite joint was suitable for power devices operating under high temperatures or other harsh environments.

The purpose of this paper is to provide an overview of the fast‐growing virtual world, focusing on the appeal of these environments for the “digital native” generation and the growth of Second Life.

The paper examines the latest research on virtual worlds and Second Life, examining the corporate presence “in‐world,” as well as the economic, technical, legal, ethical, and security issues involved for companies doing business in the virtual world.

The paper shows that Second Life and virtual worlds hold great opportunities, along with significant downsides, for companies.

The research is limited by the very fact that this is a fast‐developing, fast‐changing area, constantly generating both new opportunities and new issues/challenges.

With projections that 80 percent of all internet users will be involved in virtual worlds by 2011, it is important that executives and academicians be knowledgeable about these 3D internet environments.

The paper traces the development of virtual worlds in the larger context of the growth of online gaming as a form of entertainment and interaction. It takes an objective look at the benefits and pitfalls for organizations looking to engage in Second Life and other virtual worlds.