Orazio Muscato, Wolfgang Wagner and Vincenza Di Stefano
– The purpose of this paper is to deal with the self-heating of semiconductor nano-devices.
Abstract
Purpose
The purpose of this paper is to deal with the self-heating of semiconductor nano-devices.
Design/methodology/approach
Transport in silicon semiconductor devices can be described using the Drift-Diffusion model, and Direct Simulation Monte Carlo (MC) of the Boltzmann Transport Equation.
Findings
A new estimator of the heat generation rate to be used in MC simulations has been found.
Originality/value
The new estimator for the heat generation rate has better approximation properties due to reduced statistical fluctuations.
Details
Keywords
Hydrodynamic‐like models are commonly used for describing carrier transport in semiconductor devices. One major problem of this formulation is how to model the production terms…
Abstract
Hydrodynamic‐like models are commonly used for describing carrier transport in semiconductor devices. One major problem of this formulation is how to model the production terms. In this paper the relaxation‐time approximation and the moments expansion of the production terms are checked with Monte Carlo simulations for a one dimensional n+ – n – n+ silicon diode in the spherical parabolic band approximation.
Details
Keywords
Orazio Muscato and Vincenza Di Stefano
The purpose of this paper is to set up a consistent off‐equilibrium thermodynamic theory to deal with the self‐heating of electronic nano‐devices.
Abstract
Purpose
The purpose of this paper is to set up a consistent off‐equilibrium thermodynamic theory to deal with the self‐heating of electronic nano‐devices.
Design/methodology/approach
From the Bloch‐Boltzmann‐Peierls kinetic equations for the coupled system formed by electrons and phonons, an extended hydrodynamic model (HM) has been obtained on the basis of the maximum entropy principle. An electrothermal Monte Carlo (ETMC) simulator has been developed to check the above thermodynamic model.
Findings
A 1D n+−n−n+ silicon diode has been simulated by using the extended HM and the ETMC simulator, confirming the general behaviour.
Research limitations/implications
The paper's analysis is limited to the 1D case. Future researches will also consider 2D realistic devices.
Originality/value
The non‐equilibrium character of electrons and phonons has been taken into account. In previous works, this methodology was used only for equilibrium phonons.
Details
Keywords
Orazio Muscato and Wolfgang Wagner
To provide an accurate analysis of the systematic error introduced by the constant time technique free flight mechanism, due to the choice of the time step and number particles.
Abstract
Purpose
To provide an accurate analysis of the systematic error introduced by the constant time technique free flight mechanism, due to the choice of the time step and number particles.
Design/methodology/approach
A homogeneous (bulk) silicon semiconductor is studied by using direct simulation Monte Carlo (DSMC).
Findings
The systematic error turns out to be of the first order with respect to the time step. The efficiency of the method is tackled.
Research limitations/implications
The analysis is limited to the bulk case. Future researches will consider non homogeneous devices
Originality/value
An accurate analysis of an “old” free flight mechanism has been performed, and its limits have been stated.