Nicolas NOLHIER, Evgeny STEFANOV, Georges CHARITAT and Pierre ROSSEL
Modelling and designing modern power devices is more and more often performed with two dimensional numerical simulation of basic semiconductor equations. Well‐known simulators…
Abstract
Modelling and designing modern power devices is more and more often performed with two dimensional numerical simulation of basic semiconductor equations. Well‐known simulators, such as PISCES, are powerful and versatile tools, including a lot of physical mechanisms and simulation possibilities. However, this ability to address a very wide range of problems is often paid for by long CPU times and long training periods. These considerations have led us to develop a new two‐dimensional simulator targeted for a very specific goal: the study of the voltage handling capability of high voltage structures. Solving only the Poisson equation allows implementation of very fast numerical algorithms. The calculus of the breakdown voltage is performed by the classical evaluation of ionization integrals, incorporating a new fast iterative technique and an original ionization integral paths determination. Simulation results and comparison with commercial simulator will be presented.