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Theoretical calculations of tunneling characteristics of the Gated Resonant Tunneling Diode (GRTD) aie obtained in low dimensionality using a scattering transfer matrix approach. In the bias conditions whereby the GRTD reaches zero‐dimension in the well region, we consider attractive and repulsive perturbation potential (Vsc) of impurity or defect scattering in emitter and well regions. We describe the scattering matrices using the presence of evanescent, or nonpropagating, modes in different lateral confinement structure. Numerical solutions to the two‐dimensional Poisson equation and the continuity equation are used to calculate the lateral depletion region and carrier concentrations by the finite difference method. Electron transport in double‐barrier structure is calculated by a self‐consistent approach.

This paper presents a self‐consistent I‐V simulation technique for an RTD with defect wells placed inside the barriers. The motivation of this paper was to model the excess valley current by a defect‐assisted tunneling mechanism. We have calculated the transmission coefficients and I‐V characteristics self consistently with Poisson's equation coupled to quantum mechanical tunneling through the barrier. The shape of transmission coefficient was broadened and greatly enhanced in the off‐resonance region when the defect well was introduced in the barriers. Our results gave a good qualitative estimation of the valley current and the peak to valley current ratio (PVCR).