Search results

1 – 2 of 2
Per page
102050
Citations:
Loading...
Access Restricted. View access options
Article
Publication date: 5 May 2020

Aleksandra Drygała, Marek Szindler, Magdalena Szindler and Ewa Jonda

The purpose of this paper is to improve the efficiency of dye-sensitized solar cells (DSSCs) which present promising low-cost alternative to the conventional silicon solar cells…

271

Abstract

Purpose

The purpose of this paper is to improve the efficiency of dye-sensitized solar cells (DSSCs) which present promising low-cost alternative to the conventional silicon solar cells mainly due to comparatively low manufacturing cost, ease of fabrication and relatively good efficiency. One of the undesirable factor in DSSCs is the electron recombination process that takes place at the transparent conductive oxide/electrolyte interface, on the side of photoelectrode. To reduce this effect in the structure of the solar cell, a TiO2 blocking layer (BL) by atomic layer deposition (ALD) was deposited.

Design/methodology/approach

Scanning electron microscope, Raman and UV-Vis spectroscopy were used to evaluate the influence of BL on the photovoltaic properties. Electrical parameters of manufactured DSSCs with and without BL were characterized by measurements of current-voltage characteristics under standard AM 1.5 radiation.

Findings

The TiO2 BL prevents the physical contact of fluorine-doped tin oxide (FTO) and the electrolyte and leads to increase in the cell’s overall efficiency, from 5.15 to 6.18%. Higher density of the BL, together with larger contact area and improved adherence between the TiO2 layer and FTO surface provide more electron pathways from TiO2 to FTO which facilitates electron transfer.

Originality/value

This paper demonstrates that the introduction of a BL into the photovoltaic device structure is an important step in technology of DSSCs to improve its efficiency. Moreover, the ALD is a powerful technique which allows for the highly reproducible growth of pinhole-free thin films with excellent thickness accuracy and conformality at low temperature.

Details

Microelectronics International, vol. 37 no. 2
Type: Research Article
ISSN: 1356-5362

Keywords

Access Restricted. View access options
Article
Publication date: 1 August 2016

Kazimierz Drabczyk, Jaroslaw Domaradzki, Grazyna Kulesza-Matlak, Marek Lipinski and Danuta Kaczmarek

The purpose of this paper was investigation and comparison of electrical and optical properties of crystalline silicon solar cells with ITO or TiO2 coating. The ITO, similar to TiO…

162

Abstract

Purpose

The purpose of this paper was investigation and comparison of electrical and optical properties of crystalline silicon solar cells with ITO or TiO2 coating. The ITO, similar to TiO2, is very well transparent in the visible part of optical radiation; however, its low resistivity (lower that 10-3 Ohm/cm) makes it possible to use simultaneously as a transparent electrode for collection of photo-generated electrical charge carriers. This might also invoke increasing the distance between screen-printed metal fingers at the front of the solar cell that would increase of the cell’s active area. Performed optical investigation showed that applied ITO thin film fulfill standard requirements according to antireflection properties when it was deposited on the surface of silicon solar cell.

Design/methodology/approach

Two sets of samples were prepared for comparison. In the first one, the ITO thin film was deposited directly on the crystalline silicon substrate with highly doped emitter region. In the second case, the TCO film was deposited on the same type of silicon substrate but with additional ultrathin SiO2 passivation. The fingers lines of 80 μm width were then screen-printed on the ITO layer with two different spaces between fingers for each set. The influence of application of the ITO electrode and the type of metal electrodes patterns on the electrical performance of the prepared solar cells was investigated through optical and electrical measurements.

Findings

The electrical parameters such as short-circuit current (Jsc), open circuit voltage (Voc), fill factor (FF) and conversion efficiency were determined on a basis of I-V characteristics. Short-circuit current density (Jsc) was equal to 32 mA/cm2 for a solar cell with a typical antireflection layer and 31.5 mA/cm2 for the cell with ITO layer, respectively. Additionally, electroluminescence of prepared cells was measured and analysed.

Originality/value

The influence of the properties of ITO electrode on the electrical performance of crystalline silicon solar cells was investigated through complex optical, electrical and electroluminescence measurements.

Details

Microelectronics International, vol. 33 no. 3
Type: Research Article
ISSN: 1356-5362

Keywords

1 – 2 of 2
Per page
102050