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The purpose of this paper is to propose a simple physical evaporation route in which catalyst‐free zinc oxide (ZnO) nanoscrewdrivers were deposited on silicon (Si) (111) substrates.

Prior to the deposition, the Si (111) wafer was cut into pieces of 2×2 cm². Then, the wafers were dipped for 1 min into mixture buffered oxide etchant to remove native oxide. Then, the samples were rinsed in an ultrasonic bath cleaned with boiling acetone, ethanol, and de‐ionized (DI) water for 10 min. Lastly, the wafers were rinsed in 25 ml DI water in stirred and then were blown dry with nitrogen. In this technique, the starting material is high‐purity metallic zinc (Zn) powder (99.99 per cent pure). Following, the Zn films were then annealed under air environment in the furnace at 500°C for 1 h deprived of any catalysts.

These ZnO samples were studied by scanning electron microscopy, high‐resolution X‐ray diffraction (HR‐XRD), and photoluminescence (PL) spectroscopy. Atomic force microscope (AFM) images were applied to ascertain surface morphology of produced ZnO nanoscrewdrivers. XRD pattern confirmed that the ZnO nanoscrewdrivers were of polycrystalline structure in universe with a hexagonal close packed type and c‐axis is perpendicular to the substrate. The peak at 34° correspond to the reflection planes of ZnO(002) crystallographic plane is perceived. The AFM surface images disclosed that the surfaces of produced ZnO thin films are not smooth. The PL spectrum of as‐synthesized nanoscrewdrivers shows a UV emission peak at 380 nm and a broad green emission peak at 500 nm.

The paper reports on a simple physical evaporation route, ZnO nanoscrewdrivers were synthesized via the thermal evaporation of the high‐purity Zn powders and annealed at 500°C under air atmosphere without introducing any hetero‐metal catalysts or other carrier gases approach.

The purpose of this paper is to demonstrate the n‐ZnO/p‐Si Schottky photodiodes.

A Zn film was deposited on silicon substrate by dc sputtering deposition technology from high purity zinc (Zn) targets. Then, the Zn films were then annealed under flowing oxygen (O₂) gas environment in the furnace. ZnO nanorods morphologies have been successfully prepared through a simple method. No catalyst is required.

The structures and morphologies of the products were characterized in detail by using X‐ray diffraction, energy dispersive X‐ray, and scanning electron microscopy (SEM). According to experimental results, the current‐voltage characteristics of the device show the typical rectifying behaviour of Schottky diodes. The UV photocurrent measurement was performed using an UV lamp under a reverse bias.

The paper demonstrates that the n‐ZnO/p‐Si diodes exhibit strong rectifying conduct described by the current‐voltage (I‐V) measurement under a dark and illumination conditions.

This chapter discusses the practical challenges and opportunities involved in merging the two fields of cognitive neurosciences and strategic management, starting from the premise that the need to marry them is justified by their complementarities, as opposed to the level of analysis on which they both focus. We discuss the potential benefits and drawbacks of using methods borrowed from cognitive neurosciences for management research. First, we argue that there are clear advantages in deploying techniques that enable researchers to observe processes and variables that are central to management research, with the caveat that neuroscientific methods and techniques are not general-purpose technologies. Second, we identify three core issues that specify the boundaries within which management scholars can usefully deploy such methods. Third, we propose a possible research agenda with various areas of synergy between the complementary capabilities of management and neuroscience scholars, aiming to generate valuable knowledge and insight for both disciplines and also for society as a whole.

The purpose of this paper is to present the characteristics of novel silicon Schottky barrier (SB) photodiodes (PDs) with aluminium nitride (AlN) (100 nm) nucleation layer.

Comparison was made with conventional silicon SB PDs.

It was found that smaller dark current could be achieved with AlN nucleation layer. It was also found that effective SB height increased from 0.65 to 0.71 eV with the insertion of the AlN layer. The dark leakage current for the Schottky PDs with the AlN layer was shown to be about two orders of magnitude smaller than that for the conventional silicon SB PDs.

It is possible that the detrimental effect of interface states situated near the metal semiconductor interface was less pronounced for the sample owing to the insertion of the AlN nucleation layer.

There is believed to be no other report on silicon SB PDs capped with an AlN layer in the literature. This paper describes the fabricated silicon SB PDs and reports on the electrical characteristics of the devices with an AlN nucleation layer grown at low temperature.

This paper aims to report on the use of radio frequency nitrogen plasma‐assisted molecular beam epitaxy (RF‐MBE) to grow high‐quality n‐type In_0.47Ga0.53N/GaN on Si(111) substrate using AlN as a buffer layer.

Structural analyses of the InGaN films were performed by using X‐ray diffraction, atomic force microscopy, and Hall measurement. Metal‐semiconductor‐metal (MSM) photodiode was fabricated on the In_0.47Ga0.53N/Si(111) films. Electrical analysis of the MSM photodiodes was carried out by using current‐voltage (I‐V) measurements. Ideality factors and Schottky barrier heights for Ni/In_0.47Ga0.53N, was deduced to be 1.01 and 0.60 eV, respectively.

The In_0.47Ga0.53N MSM photodiode shows a sharp cut‐off wavelength at 840 nm. A maximum responsivity of 0.28 A/W was achieved at 839 nm. The detector shows a little decrease in responsivity from 840 to 200 nm. The responsivity of the MSM drops by nearly two orders of magnitude across the cut‐off wavelength.

Focuses on III‐nitride semiconductors, which are of interest for applications in high temperature/power electronic devices.

The purpose of this paper is to propose a new structure of GaN based metal‐semiconductor‐metal (MSM) photodiode, in which a thin unintentionally doped n‐type AlGaN layer is added on the conventional GaN on Si(111) device structure.

A thin Al_0.50Ga_0.50N cap layer of 100 nm was incorporated in GaN MSM photodiode to enhance the effective Schottky barrier height and reduce the dark current. When the incident light with photon energy higher than the band edge of GaN but lower than the bandgap of AlGaN illuminates the front face of photodiode, the light can be transparent in the top AlGaN layer and is only absorbed by the GaN layer. As a result, the photogenerated carriers in the GaN layer would be influenced by the interface states of AlGaN/GaN. It is known that the density of the interface states is normally lower than that of surface states, so the recombination of photogenerated electron‐hole pairs will be reduced. A barrier height of 0.54 eV for normal GaN MSM photodiode was increased to the effective barrier height of 0.60 eV.

The resulting MSM photodiode shows a dark current of as low as 8.0×10⁻⁴ A at 5 V bias, which is about two orders of magnitude lower than that of normal GaN (1.0×10⁻² A at 5 V bias) MSM photodiode.

The paper reports on barrier enhanced GaN Schottky MSM photodiode using a thin AlGaN cap layer. AlGaN cap layers were found to effectively suppress the leakage current of the GaN Schottky MSM photodiode, resulting in improved device characteristics. The dark current for the Schottky contact with the AlGaN cap layer was shown to be about about two orders of magnitude smaller than that of conventional GaN Schottky MSM photodiode.

The purpose of this research work is to harvest energy using the piezoelectric properties of ZnO nanowires (NW). Fabrication and characterization of the piezoelectric nanogenerator (NG), based on Al/ZnO/Au structure without using hosting layer, were done to harvest energy. The proposed method has full potential to harvest the cost-effective energy.

ZnO NW were fabricated between the thin layers of Al- and Au-coated substrates for the development of piezoelectric NG. To grow ZnO NW, ZnO seed layer was prepared on the Al-coated substrate, and then ZnO NW were grown by aqueous chemical growth method. Finally, Au top electrode was used to conclude the Al/ZnO/Au NG structure. The Al and Au electrodes were used to establish the ohmic and Schottky contacts with ZnO NW, respectively.

Surface morphology of the fabricated device was done by using scanning electron microscopy, and electrical characterization of the sample was performed with digital oscilloscope, picoammeter and voltmeter. The energy harvesting experiment was performed to excite the presented device. The fabricated piezoelectric-sensitive device revealed the maximum open circuit voltage up to 5 V and maximum short circuit current up to 30 nA, with a maximum power of 150 nW. Consequently, it was also shown that the output of the fabricated device was increased by applying the stress. The presented work will help for the openings to capture the mechanical energy from the surroundings to power up the nano/micro-devices. This research work shows that NGs have the competency to build the self-powered nanosystems. It has potential applications in biosensing and personal electronics.

The fabrication of simple and cost-effective piezoelectric NG is done with a structure of Al/ZnO/Au without using hosting layer. The presented method elucidates an efficient and cost-effective approach to harvest the mechanical energy from the native environment.

This paper aims to examine the critical role played by cultural flow in fostering successful expatriate cross-border transitions.

The authors develop and test a model on the interplay among cultural intelligence, organizational position level, cultural flow direction and expatriate adaptation, using a data set of 387 expatriate on cross-border transitions along the Belt & Road area.

The authors find that both organizational position level and cultural flow moderate the relationship between cultural intelligence and expatriate adaptation, whereby the relationship is contingent on the interaction of organizational position status and assignment directions between high power distance and low power distance host environments.

Previous research has shown that higher levels of cultural intelligence are positively related to better expatriate adaptation. However, there is a lack of research on the effect of position difference and cultural flow on such relationship. Our study is among the first to examine how the interaction between cultural flow and organizational position level influences the cultural intelligence (CI) and cultural adjustment relationship in cross-cultural transitions.

This paper aims to examine the asymmetric effect of cultural distance on the relationship between cultural intelligence and expatriate adjustment through the mechanisms of conflict management styles.

This paper conceptualizes a model depicting the interplay between culture intelligence, conflict management styles, cultural flows and expatriate adjustment.

The authors argue that the integrating style aggravates the positive effects of cultural intelligence on expatriate adjustment, while the avoiding style may undermine such effects. There is also a possible moderating effect of cultural distance asymmetry on the relationship between cultural intelligence and expatriate adjustment such that, the positive influence of cultural intelligence on adjustment is reinforced when the expatriate is sent from a loose cultural environment to adjust to a tight cultural environment, and that the positive influence of cultural intelligence on adjustment is diminished when the expatriate is sent from a tight cultural environment to adjust to a loose cultural environment.

This paper explicates the mediating effect of conflict management styles and the moderating roles of cultural distance asymmetry on the relationship between cultural intelligence and expatriate adjustment. The authors suggest that the level of adjustment is contingent on the direction of cultural flows that the assignment operates in.

In the existing era, international trade is boosted by maritime freight movement. The academicians and Government are concerned about environmental contamination caused by maritime goods that transit global growth and development. Digital technologies like blockchain help the maritime freight business to stay competitive in the digital age. This study aims to illuminate blockchain technology (BCT) adoption aspects to alleviate early industry adoption restrictions.

This study adopts a two-stage approach comprising of structural equation modeling (SEM) with artificial neural networks (ANN) to analyze critical factors influencing the adoption of BCT in the sustainable maritime freight industry.

The SEM findings from this study illustrate that social, organizational, technological and infrastructual and institutional factors affect BCT execution. Furthermore, the ANN technique uses the SEM data to determine that sustainability enabled digital freight training (S3), initial investment cost (O5) and trust over digital technology (G1) are the most essential blockchain deployment factors.

The hybrid approach aims to help decision-makers and policymakers examine their organizational blockchain adoption goals to construct sustainable, efficient and effective maritime freight transportation.