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Article
Publication date: 21 May 2013

Seung-Jin Kim, Jun-Hyeong Park and Jeong-hyun Kim

This study surveys the characteristics of the nanocomposite film for PU/MWNT. For this purpose, several kinds of PU/MWNT nanocomposite films were prepared with four kinds of MWNT…

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Abstract

This study surveys the characteristics of the nanocomposite film for PU/MWNT. For this purpose, several kinds of PU/MWNT nanocomposite films were prepared with four kinds of MWNT, MWNT contents and two kinds of dispersion times and ESD (Electrostatic Dissipation) films composed with polyurethane (PU) block copolymer and selected multi-walled carbon nanotube (MWNT) were also prepared by disperse processing with various MWNT contents and dispersion times, and their mechanical and chemical properties were investigated with electrical conductivity. The tensile properties and chemical properties of PU/MWNT nanocomposite films were measured using UV-visible spectrometer and discussed with the manufacturing conditions of nanocomposite film. Furthermore, the PU/MWNT films were made by dispersing with five kinds of CNT content and six kinds of dispersion time under the DMF (dimethylformamide) solution, and the mechanical properties of the PU/MWNT films were analyzed by Instron and discussed with various dispersion conditions.

Details

World Journal of Engineering, vol. 10 no. 2
Type: Research Article
ISSN: 1708-5284

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Article
Publication date: 13 September 2013

Myong‐Hoon Roh, Jun‐Hyeong Lee, Wonjoong Kim and Jea Pil Jung

The purpose of this paper is to overview the effect of electroplating current wave forms on Cu filling of through‐silicon‐vias (TSV) for three‐dimensional (3D) packaging.

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Abstract

Purpose

The purpose of this paper is to overview the effect of electroplating current wave forms on Cu filling of through‐silicon‐vias (TSV) for three‐dimensional (3D) packaging.

Design/methodology/approach

The paper takes the form of a literature review.

Findings

Effective TSV technology for 3D packaging involves various processes such as via formation, filling with conductive material, wafer thinning, and chip stacking. Among these processes, high‐speed via filling without defect is very important for applying the TSV process to industry with a lower production cost. In this paper, the effects of various current forms on Cu electroplating of TSV such as direct current (DC), pulse current (PC), pulse reverse current (PRC), and periodic pulse reverse current (PPR) are described in detail including recent studies.

Originality/value

TSV is a core technology for high density 3D packaging. This paper overviews the recent studies of various current forms on Cu‐filling of TSV.

Details

Soldering & Surface Mount Technology, vol. 25 no. 4
Type: Research Article
ISSN: 0954-0911

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