Hoa N. Xuan, Jean‐Louis Coulomb, Laurent Gerbaud, Jean‐Christophe Crebier and Nicolas Rouger
The purpose of this paper is to present an effective optimization strategy applied in a physical structure optimization of a semiconductor power metal oxide semiconductor…
Abstract
Purpose
The purpose of this paper is to present an effective optimization strategy applied in a physical structure optimization of a semiconductor power metal oxide semiconductor field‐effect transistor (MOSFET), with an expensive integration constraint computation.
Design/methodology/approach
In order to deal with inaccuracy due to inevitable numerical errors in the objective function calculation (the power losses of the power MOSFET) and in the constraint computation, the paper proposes to use the progressive quadratic response surface method (PQRSM).
Findings
The paper focuses on four aspects: the inevitable numerical errors in the power loss and the integration constraint computation; the response surface approximation (RSA) method; the PQRSM principle; and finally the comparisons of several optimization methods applied on this application problem.
Originality/value
An original optimization method, PQRSM, is proposed for reducing the oscillation problem of a semi‐analytical model. The optimization results of PQRSM have been compared with the evolution strategy (ES) algorithm, with similar results but faster computation.