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The development of a numerical implementation of the small signal response of the MOS (Metal‐Oxide‐Silicon) capacitor using time perturbation analysis is discussed. The effects of nonconstant doping profiles and interface and bulk traps are included. The model uses Fermi‐Dirac statistics to describe the occupancy of the interface and bulk traps. The oxide region is considered to have no mobile carriers and any fixed oxide charge distribution is modeled as a charge sheet at the Si‐SiO2 interface. This technique can be used to find the small signal response of the device from the static solution.