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This paper aims to report on the use of radio frequency nitrogen plasma‐assisted molecular beam epitaxy (RF‐MBE) to grow high‐quality n‐type In_0.47Ga0.53N/GaN on Si(111) substrate using AlN as a buffer layer.

Structural analyses of the InGaN films were performed by using X‐ray diffraction, atomic force microscopy, and Hall measurement. Metal‐semiconductor‐metal (MSM) photodiode was fabricated on the In_0.47Ga0.53N/Si(111) films. Electrical analysis of the MSM photodiodes was carried out by using current‐voltage (I‐V) measurements. Ideality factors and Schottky barrier heights for Ni/In_0.47Ga0.53N, was deduced to be 1.01 and 0.60 eV, respectively.

The In_0.47Ga0.53N MSM photodiode shows a sharp cut‐off wavelength at 840 nm. A maximum responsivity of 0.28 A/W was achieved at 839 nm. The detector shows a little decrease in responsivity from 840 to 200 nm. The responsivity of the MSM drops by nearly two orders of magnitude across the cut‐off wavelength.

Focuses on III‐nitride semiconductors, which are of interest for applications in high temperature/power electronic devices.

The purpose of this paper is to propose a new structure of GaN based metal‐semiconductor‐metal (MSM) photodiode, in which a thin unintentionally doped n‐type AlGaN layer is added on the conventional GaN on Si(111) device structure.

A thin Al_0.50Ga_0.50N cap layer of 100 nm was incorporated in GaN MSM photodiode to enhance the effective Schottky barrier height and reduce the dark current. When the incident light with photon energy higher than the band edge of GaN but lower than the bandgap of AlGaN illuminates the front face of photodiode, the light can be transparent in the top AlGaN layer and is only absorbed by the GaN layer. As a result, the photogenerated carriers in the GaN layer would be influenced by the interface states of AlGaN/GaN. It is known that the density of the interface states is normally lower than that of surface states, so the recombination of photogenerated electron‐hole pairs will be reduced. A barrier height of 0.54 eV for normal GaN MSM photodiode was increased to the effective barrier height of 0.60 eV.

The resulting MSM photodiode shows a dark current of as low as 8.0×10⁻⁴ A at 5 V bias, which is about two orders of magnitude lower than that of normal GaN (1.0×10⁻² A at 5 V bias) MSM photodiode.

The paper reports on barrier enhanced GaN Schottky MSM photodiode using a thin AlGaN cap layer. AlGaN cap layers were found to effectively suppress the leakage current of the GaN Schottky MSM photodiode, resulting in improved device characteristics. The dark current for the Schottky contact with the AlGaN cap layer was shown to be about about two orders of magnitude smaller than that of conventional GaN Schottky MSM photodiode.

The purpose of this paper is to study the structural and optical characterization of Al_x In_y Ga_1−x−y N quaternary epilayers, which were grown on c‐plane (0001) sapphire substrates with AlN as buffer layers using plasma assisted molecular beam epitaxy technique with indium (In) mole fraction y ranging from 0.0 to 0.1 and constant aluminum (Al) mole fraction x=0.06.

High‐resolution X‐ray diffraction rocking curve (HRXRD‐RC), scanning electron microscopy (SEM), energy dispersive X‐ray spectrometry (EDX), and photoluminescence (PL) spectroscopy have been measured on quaternary Al_x In_y Ga_1−x−y N thin films at room temperature.

HRXRD‐RC measurements confirmed that the Al_x In_y Ga_1−x−y N alloys had wurtzite structure. SEM images, element composition analysis by EDX, provided the evidence to show the existence of defects inside the samples contaminated by silicon from previous growth leading to nonuniformity of the epilayers, which caused decreased in the quality of the samples. PL spectra show reducing of the integrated intensity and an increasing red shift with increasing in content with reference to the ternary sample Al_0.06Ga_0.94N. The existence of a large amount of nonradiative recombination centers are responsible for the reduced the luminescence and the red shift provided evidence to an increase in composition inside the Al_x In_y Ga_1−x−y N quaternary alloys. Photoluminescence is used to determine the behavior of the near band edge emission represent the energy band gap of the quaternary films. The energy band gap decreases with increasing In composition from 0.01 to 0.1 mole fraction. This trend is expected since the incorporation of in reduced the energy band gap of ternary Al_0.06Ga_0.94N (3.529 eV). We have also investigated the bowing parameter of the variation of energy band gaps and found it to be very sensitive on in composition. A value of b=10.95 have been obtain for our quaternary Al_x In_y Ga_1−x−y N alloys.

This study on quaternary samples described in this paper, clearly indicates that the present of defects due to impurity contaminations has a dominant role in determining the structural and optical properties of Al_x In_y Ga_1−x−y N quaternary alloys.

The purpose of this paper is to present the characteristics of novel silicon Schottky barrier (SB) photodiodes (PDs) with aluminium nitride (AlN) (100 nm) nucleation layer.

Comparison was made with conventional silicon SB PDs.

It was found that smaller dark current could be achieved with AlN nucleation layer. It was also found that effective SB height increased from 0.65 to 0.71 eV with the insertion of the AlN layer. The dark leakage current for the Schottky PDs with the AlN layer was shown to be about two orders of magnitude smaller than that for the conventional silicon SB PDs.

It is possible that the detrimental effect of interface states situated near the metal semiconductor interface was less pronounced for the sample owing to the insertion of the AlN nucleation layer.

There is believed to be no other report on silicon SB PDs capped with an AlN layer in the literature. This paper describes the fabricated silicon SB PDs and reports on the electrical characteristics of the devices with an AlN nucleation layer grown at low temperature.

This paper aims to address the void in the current literature regarding the determinants of career choice in Romania, an emerging economy. The objective is to furnish empirical data on the factors that impact students’ intentions to pursue a career in accounting while adding to the academic discourse on this topic. To accomplish this, the authors use an integrative model of the theory of planned behaviour (TPB) and social cognitive career theory (SCCT) in this analysis. This study aims to illuminate the factors that motivate students to pursue an accounting career and attain certification.

The sample consisted of accounting students from the largest public university in Romania, as they were readily accessible. The authors used a structured questionnaire to gather data and analyse the responses. To test the model and research hypotheses, the authors used structural equation modelling (SEM) techniques. Given the sample size, the authors opted for partial least squares SEM, which provides greater flexibility in modelling and can estimate complex models.

This study reveals that two factors, attitude and perceived behavioural control (PBC), play a significant role in shaping the inclination of accounting students towards pursuing a career in this field. The authors also found that the factor of self-evaluating outcome expectations (SEOEs) strongly influences accounting students’ attitudes. Additionally, the study highlights the impact of self-efficacy on both SEOEs and PBC. However, subjective norms and perceived job availability were not found to significantly sway the intention of accounting students towards this career path.

The research findings hold significant implications for individuals invested in the accounting profession, especially in developing nations where the number of skilled professionals is limited. The use of the TPB and SCCT frameworks in the realm of accounting illustrates the paramount influence of attitude on career aspirations. Consequently, professional organisations and academic institutions can showcase the advantages of the profession and highlight its societal value to appeal to a greater number of students. By fostering a positive perception, countering unfavourable beliefs and augmenting SEOEs and self-efficacy, stakeholders can enhance the appeal of accounting as a career path.

To the best of authors’ knowledge, this study is one of the first to apply the above integrative model in the accounting field while aiming to improve interdisciplinary integration.

This study aims to assess the effectiveness of a resilience-building program in reducing social anxiety among victimized adolescents and examining the mediating role of resilience in the relationship between peer victimization and social anxiety.

A nonequivalent control group pre-post quasi-experimental design was used, with participants divided into an intervention group receiving resilience training and a wait-list control group. This study involved Jordanian adolescents who had experienced peer victimization and reported elevated social anxiety symptoms. The intervention utilized the Youth Resilience Program, a nonclinical psychosocial method.

A total of 137 participants completed the study, with no significant baseline differences between the intervention and control groups in resilience, social anxiety or peer victimization scores. The intervention group showed significant improvements in resilience and reductions in social anxiety and peer victimization compared to the control group. Resilience partially mediated the relationship between peer victimization and social anxiety, indicating that higher resilience reduced the impact of victimization on social anxiety, although victimization still had a direct effect on social anxiety.

The resilience-building program was effective in enhancing resilience and reducing social anxiety among victimized adolescents. However, while resilience reduced the impact of victimization, it did not entirely eliminate the anxiety associated with victimization, indicating the need for comprehensive interventions that address both resilience and other factors contributing to social anxiety. This study contributes to the understanding of the complex interplay between peer victimization, social anxiety and resilience in Arab adolescents and underscores the importance of culturally sensitive interventions in promoting adolescent mental health.

Within the Arab Jordanian context, the intricate relationship between social anxiety and peer victimization is profoundly influenced by the unique sociocultural factors and family dynamics of the Arab societies, which often place a strong emphasis on collectivism and conformity (Obeidat et al., 2012). Arab families often expect their children to adhere to societal norms and maintain harmonious relationships within the family and community. This emphasis on conformity can intensify social anxiety among adolescents, as the fear of deviating from the expected norms and bringing shame to the family can be overwhelming. However, the scenarios are grounded in hypotheses derived from prior Arab research examining various related variables. It is important to note that existing evidence regarding the role of adolescent resilience in shaping the relationship between peer victimization and social anxiety primarily stems from Western literature, using Western samples. No studies have yet investigated how these factors interact and influence one another among Arab adolescents.

This study aims to explore the various approaches used in the general customer service industry to develop a conceptual framework for evaluating the responses of facility managers to user post-occupancy feedback.

This study uses conceptual analysis based on a comprehensive review of relevant literature.

The results of the study established 24 propositions which are categorised under organisational response dimensions specific to facilities management (FM): timeliness, facilitation, redress, apology, credibility of explanation, attentiveness, effort and their relationships with overall satisfaction and post-feedback behaviour, such as word of mouth and acceptance to continue using the facilities.

The established propositions are derived from existing theories using a deductive approach. The framework can be further enhanced to suit various applications in FM services.

This conceptual framework is a generic model, appropriate to many FM scenarios. The framework can be used to develop standard policies and procedures to foster and encourage collaborative relationships between users and facility managers. It reinforces transparency and trust between facility managers and users during the operation and management of the facilities, and improves FM effectiveness, facility performance and user post-occupancy experience.

In the FM area, no systematic approach has been previously established to evaluate and improve the response process to the users’ feedback. The proposed framework is a pioneer contribution in this area.

The purpose of this paper is to propose a simple physical evaporation route in which catalyst‐free zinc oxide (ZnO) nanoscrewdrivers were deposited on silicon (Si) (111) substrates.

Prior to the deposition, the Si (111) wafer was cut into pieces of 2×2 cm². Then, the wafers were dipped for 1 min into mixture buffered oxide etchant to remove native oxide. Then, the samples were rinsed in an ultrasonic bath cleaned with boiling acetone, ethanol, and de‐ionized (DI) water for 10 min. Lastly, the wafers were rinsed in 25 ml DI water in stirred and then were blown dry with nitrogen. In this technique, the starting material is high‐purity metallic zinc (Zn) powder (99.99 per cent pure). Following, the Zn films were then annealed under air environment in the furnace at 500°C for 1 h deprived of any catalysts.

These ZnO samples were studied by scanning electron microscopy, high‐resolution X‐ray diffraction (HR‐XRD), and photoluminescence (PL) spectroscopy. Atomic force microscope (AFM) images were applied to ascertain surface morphology of produced ZnO nanoscrewdrivers. XRD pattern confirmed that the ZnO nanoscrewdrivers were of polycrystalline structure in universe with a hexagonal close packed type and c‐axis is perpendicular to the substrate. The peak at 34° correspond to the reflection planes of ZnO(002) crystallographic plane is perceived. The AFM surface images disclosed that the surfaces of produced ZnO thin films are not smooth. The PL spectrum of as‐synthesized nanoscrewdrivers shows a UV emission peak at 380 nm and a broad green emission peak at 500 nm.

The paper reports on a simple physical evaporation route, ZnO nanoscrewdrivers were synthesized via the thermal evaporation of the high‐purity Zn powders and annealed at 500°C under air atmosphere without introducing any hetero‐metal catalysts or other carrier gases approach.

The purpose of this paper is to synthesize Si (porous silicon (PS)) by laser‐induced etching (LIE) technique. The LIE process has the added advantage of a controlling size and optical properties without using of electrodes. The LIE process is a promising technique for fabricating many optoelectronic devices including: light‐emitting devices, detectors, sensors and large‐scale integrated circuits.

PS has been fabricated by LIE technique. Surface morphology and structural properties of nanostructures are characterized by using scanning electron microscopy and X‐ray diffraction (XRD). Photoluminescence (PL) measurement is also performed at room temperature by using He‐Cd laser (λ=325 nm) and Raman scattering has been investigated using Ar⁺ laser (λ=514 nm).

Surface morphology indicated that chemical reaction has been initiated with laser power density of 12 W/cm², resulting in irregular structure. Micro‐columns are structured on surface with laser power density of 25 W/cm². The pores structures are confined to smaller size, and the walls between the pore become extremely thin and shorter at 64 W/cm² power density and 120 min irradiation time. PL spectra at room temperature for PS prepared at power density of 64 W/cm² and irradiation time of 120 min shows the blue shift of PL at 400 nm and the full‐width and half maximum is about 60 nm. The broadening of the band gap energy occurs with a decrease of the crystallite size. The average diameter of nanosize Si crystallites is about 6‐10 nm. XRD indicated that the broadening in spectrum is due to the small size crystallites.

LIE processes have been used to produce high‐luminescent nanocrystallites with small size and size distribution, which is due to the quantum confinement effect.

The study investigates the intention of adopting solar panels and incorporating renewable energy sources into the electrical mix, providing insightful information on the nuances of this critical topic.

The study used online and offline surveys to gather information on rooftop solar panels from Indian homes. To get reliable findings, the collected responses were analyzed using structural equation modeling using Smart PLS version 3.5 and SPSS version 23.0.

The research examines sustainability difficulties, psychological issues and demographic considerations, yielding a variety of conclusions. Low compatibility and high perceived cost have a detrimental influence on adoption intentions, emphasizing the importance of integrating consumer perceptions with technology while addressing cost concerns. Conversely, relative advantage, awareness, environmental concern, facilitating conditions and observability positively influenced the adoption.

The study underscores the importance of highlighting benefits, raising awareness, providing necessary resources and showcasing visible instances of technology use. By revealing the connection between different factors, the study offers a roadmap for policymakers and stakeholders to accelerate the transition toward sustainable energy practices.

To the best of the authors' knowledge, this study is one of the first to propose an integration of the Theory of Planned Behavior (TPB), the Diffusion of Innovations Theory (DOI) and the Unified Theory of Acceptance and Use of Technology (UTAUT), alongside various independent variables. The research offers a comprehensive perspective on factors that facilitate and obstruct the usage of solar energy.