Search results

This paper aims to present a study on a commercial conductive polylactic acid (PLA) filament and its potential application in a three-dimensional (3D) printed smart cap embedding a resistive temperature sensor made of this material. The final aim of this study is to add a fundamental block to the electrical characterization of printed conductive polymers, which are promising to mimic the electrical performance of metals and semiconductors. The studied PLA filament demonstrates not only to be suitable for a simple 3D printed concept but also to show peculiar characteristics that can be exploited to fabricate freeform low-cost temperature sensors.

The first part is focused on the conductive properties of the PLA filament and its temperature dependency. After obtaining a resistance temperature characteristic of this material, the same was used to fabricate a part of a 3D printed smart cap.

An approach to the characterization of the 3D printed conductive polymer has been presented. The major results are related to the definition of resistance vs temperature characteristic of the material. This model was then exploited to design a temperature sensor embedded in a 3D printed smart cap.

This study demonstrates that commercial conductive PLA filaments can be suitable materials for 3D printed low-cost temperature sensors or constitutive parts of a 3D printed smart object.

The paper clearly demonstrates that a new generation of 3D printed smart objects can already be obtained using low-cost commercial materials.

In this process the electrical contact is brought to the backside of a standard silicon wafer. The details of the entire process are disclosed, from the photolithography processes to the electrodepositing step, and a model for electrical contact was designed.

The localized Cu growth of high aspect ratio (AR) microstructures was obtained through an SU-8 photolithography by exploiting the optimal adhesion on the silicon surface and the possibility of generating thick layers with a single spun process

The experimental results showed an unexpected behaviour that is theoretically explained in detail considering the energy band theory. The obtained geometries showed a remarkable 6:1 AR without any adhesion problem. The non-invasive front-side manipulation represents a noteworthy improvement and simplification for the design of a multi-step production process.

An alternative technological approach, called back plate electroplating, has been carried out to obtain Cu growth on the front side of a standard n-type Si wafer through a back side electrical contact. This technique was then applied to fabricate a master for hot-embossing in a LIGA (Lithographie, Galvanoformung, Abformung)-like process flow. For this purpose, an SU-8 thick mask on a standard n-doped wafer was used. Finally, by using this process, it was possible to obtain high AR Cu geometries, avoiding any complex designing and patterning of the contacts on the front side and thus ensuring good adhesion of the SU-8.