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This article shows that irradiation with neutrons can be used as solution to harden commercial (COTS: Commercial‐Off‐The‐Shelf) n‐channel power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) devices against destructive events induced by heavy ion irradiation. Atomic displacements created in silicon, by neutron irradiations, result in traps and recombination centers which reduce the electron‐hole pairs density generated by the heavy ion within the device. These results highlight a strong reduction in the photo‐current generated by the heavy ion, correlated with a reduction of the carrier lifetime.

The purpose of this study is to investigate the behavior of a silicon solar cell when subjected to a magnetic field. Specifically, the study aims to understand how the presence of the magnetic field influences the distribution of excess minority carriers within the base region of the solar cell. By solving the one-dimensional continuity equation under these conditions, the study seeks to elucidate the transient dynamics of carrier generation, recombination and transport processes. This research contributes to the broader understanding of how external magnetic fields can impact the performance and efficiency of silicon solar cells, potentially informing future optimizations or applications in photovoltaic technology.

The solar cell is assumed to be uniformly illuminated, which simplifies the analysis of carrier generation to a function of depth (x). The emitter and space charge region contributions are considered while neglecting the diffusion region. The injection level remains constant throughout the analysis, focusing specifically on the base thickness region, H = 200 µm.

The findings of this study reveal significant insights into the behavior of a silicon solar cell under the influence of a magnetic field. Key findings include Impact on carrier distribution: the magnetic field affects the distribution of excess minority carriers within the base region of the solar cell. This distribution is crucial for understanding the efficiency of carrier collection and overall cell performance. Transient dynamics: the transient behavior of carrier generation, recombination and transport processes in the base region is influenced by the magnetic field. This understanding helps in predicting the response time and effectiveness of the solar cell under varying magnetic field strengths. Optimization potential: insights gained from this study suggest potential strategies for optimizing the design and operation of silicon solar cells to enhance their performance in environments where magnetic fields are present. Theoretical framework: the study provides a theoretical framework based on the one-dimensional continuity equation, offering a systematic approach to analyzing and predicting the behavior of solar cells under magnetic field conditions. These findings contribute to advancing the understanding of how external factors such as magnetic fields can impact the operation and efficiency of silicon solar cells, thereby guiding future research and development efforts in photovoltaic technology.

The originality and value of this study lie in its contribution to advancing the understanding of how magnetic fields influence silicon solar cell performance, providing both theoretical insights and potential practical applications in diverse technological contexts.

The purpose of this paper is to discuss the temperature failure effect on electronic components and their electrical parameters variation.

The MOSFET device parameters analysis was done by numerical analysis based on a double exponential model using the integrated pn junction.

The temperature dependence of these parameters is investigated; their evolution allows the evaluation of device's operation reliability in high‐temperature environments.

The paper demonstrates how the temperature affect the normal operation of the electronic device and the model accuracy is investigated at high temperature.