M. Isberg, P. Jonsson, N. Keskitalo, F. Masszi and H. Bleicher
Shows how a sensitivity analysis of different mobility models was carried out in order to reach the best fit of simulation results to measured data. Simulated data were compared…
Abstract
Shows how a sensitivity analysis of different mobility models was carried out in order to reach the best fit of simulation results to measured data. Simulated data were compared to both electrical (IV‐characteristics) and optical (excess charge carrier distribution) results. The simulations included both steady state and transient investigations on a temperature scale ranging from room temperature up to 150°C. Concerning lifetimes, a two‐trap Shockley‐Read‐Hall (SRH) recombination model was implemented into the simulation code to be able to model the local lifetime variations of the irradiated samples. At high carrier concentration, the overall dominating recombination process is the Auger process. From experimental data the Auger coefficients seem to be concentration dependent too, and in addition, proposes a temperature dependence to the Auger coefficient.
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J.O. NYLANDER, F. MASSZI and P.A. TOVE
A computer model of silicon‐on‐sapphire MESFETs has been developed in order to help the construction and technology work of novel complementary MES digital circuit building…
Abstract
A computer model of silicon‐on‐sapphire MESFETs has been developed in order to help the construction and technology work of novel complementary MES digital circuit building blocks. The modelling work is based partly on physical simulation by solving the semiconductor partial differential equations, and partly on development of a large‐signal MESFET model with an arbitrary doping profile input, implemented on a nonlinear circuit analysis program. The results showed cover investigations of both DC and transient behaviour of CMES inverters.