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The purpose of this research is to study the performance of piezoresistive pressure sensors using polysilicon as the piezoresistive material, which is typically used to measure pressure in high-temperature environments.

The performance of this sensor is enhanced by studying the influence of multi-turn configuration at which the piezoresistors are arranged. Different configurations are studied and compared by laying down their analytical solution.

The validation of analytical results is accomplished through finite element analysis using the software COMSOL Multiphysics. The best configuration, which uses a partial triple-turn configuration, was able to achieve a sensitivity of 116.00 mV/V/MPa over a simulated pressure range of 0 to 500 KPa.

The literature shows the study of single-turn and double-turn meander-shaped configuration of micro-electromechanical systems piezoresistive pressure sensor but multi-turn meander-shaped configuration using a square silicon diaphragm has not been reported. Its study has reflected promising results than its counterparts based on key performance parameters such as sensitivity and linearity and are more effective to be used for automotive, aviation, biomedical and consumer electronics applications.