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Article
Publication date: 5 December 2019

Deepak Balodi, Arunima Verma and Ananta Govindacharyulu Paravastu

The paper aims to present the novel design approach for a low power LC-voltage-controlled oscillators (VCO) design with low phase noise that too targeted at the most sought band…

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Abstract

Purpose

The paper aims to present the novel design approach for a low power LC-voltage-controlled oscillators (VCO) design with low phase noise that too targeted at the most sought band of Bluetooth applications. Owing to their crucial role in a wide variety of modern applications, VCO and phase-locked loop (PLL) frequency synthesizers have been the subject of extensive research in recent years. In fact, VCO is one of the key components being used in a modern PLL to provide local frequency signal since a few decades. The complicated synthesizer requirements imposed by cellular phone applications have been a key driver for PLL research.

Design/methodology/approach

This paper first opted to present the recent developments on implemented techniques of LC-VCO designs in popular RF bands. An LC-VCO with a differential (cross-coupled) MOS structure is then presented which has aimed to compensate the losses of an on-chip inductor implemented in UMC’s 130 nm RF-CMOS process. The LC-VCO is finally targeted to embed onto the synthesizer chip, to address the narrowband (S-Band) applications where Bluetooth has been the most sought one. The stacked inductor topology has been adopted to get the benefit of its on-chip compatibility and low noise. The active differential architecture, which basically is a cross-coupled NMOS structure, has been then envisaged for the gain which counters the losses completely. Three major areas of LC-VCO design are considered and worked upon for the optimum design parameters, which includes Bluetooth coverage range of 2.410 GHz to 2.490 GHz, better linearity and high sensitivity and finally the most sought phase noise performance for an LC-VCO.

Findings

The work provides the complete design aspect of a novel LC-VCO design for low phase noise narrowband applications such as Bluetooth. Using tuned MOS varactor, in 130 nm-RF CMOS process, a high gain sensitivity of 194 MHz/Volt was obtained. Thus, the entire frequency range of 2415-2500 MHz for Bluetooth applications, supporting multiple standards from 3G to 5G, was covered by voltage tuning of 0.7-1.0 V. To achieve the low power dissipation, low bias (1.2 V) cross-coupled differential structure was adopted, which completely paid for the losses occurred in the LC resonator. The power dissipation comes out to be 8.56 mW which is a remarkably small value for such a high gain and low noise VCO. For the VCO frequencies in the presented LO-plan, the tank inductor was allowed to have a moderate value of inductance (8 nH), while maintaining a very high Q factor. The LC-VCO of the proposed LO-generator achieved extremely low phase noise of −140 dBc/Hz @ 1 MHz, as compared to the contemporary designs.

Research limitations/implications

Though a professional tool for inductor and circuit design (ADS-by Keysight Technologies) has been chosen, actual inductor and circuit implementation on silicon may still lead to various parasitic evolutions; therefore, one must have that margin pre-considered while finalizing the design and testing it.

Practical implications

The proposed LC-VCO architecture presented in this work shows low phase noise and wide tuning range with high gain sensitivity in S-Band, low power dissipation and narrowband nature of wireless applications.

Originality/value

The on-chip stacked inductor has uniquely been designed with the provided dimensions and other parameters. Though active design is in a conventional manner, its sizing and bias current selection are unique. The pool of results obtained completely preserves the originally to the full extent.

Details

Circuit World, vol. 46 no. 1
Type: Research Article
ISSN: 0305-6120

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Article
Publication date: 13 July 2020

Rashmi Dyondi, Shishir Kumar Jha and Arunima Haldar

This paper aims to examine the strategic issues of risk for independent theatrical film distributors in the Hindi film industry in India.

370

Abstract

Purpose

This paper aims to examine the strategic issues of risk for independent theatrical film distributors in the Hindi film industry in India.

Design/methodology/approach

The study adopted qualitative grounded theory approach to explore contextually relevant strategic issues of risk for independent theatrical film distributors. Semi-structured in-depth interviews with Hindi film distributors helped to gain explorative insights about the risk behaviour of film distributors operating in Mumbai “circuit”.

Findings

The findings suggest that risk faced by distributors is a function of product (film content) features, contractual terms, resources such as finance and strength of strategic alliances with the producers. The study develops a business risk model for the film distributors from a series of propositions.

Originality/value

The paper contributes to the literature on motion picture industry by highlighting the importance of distribution risk in the film value chain.

Details

International Journal of Organizational Analysis, vol. 29 no. 2
Type: Research Article
ISSN: 1934-8835

Keywords

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Book part
Publication date: 9 March 2021

Hak J. Kim

Abstract

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