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Publication date: 5 May 2020

Aleksandra Drygała, Marek Szindler, Magdalena Szindler and Ewa Jonda

The purpose of this paper is to improve the efficiency of dye-sensitized solar cells (DSSCs) which present promising low-cost alternative to the conventional silicon solar cells…

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Abstract

Purpose

The purpose of this paper is to improve the efficiency of dye-sensitized solar cells (DSSCs) which present promising low-cost alternative to the conventional silicon solar cells mainly due to comparatively low manufacturing cost, ease of fabrication and relatively good efficiency. One of the undesirable factor in DSSCs is the electron recombination process that takes place at the transparent conductive oxide/electrolyte interface, on the side of photoelectrode. To reduce this effect in the structure of the solar cell, a TiO2 blocking layer (BL) by atomic layer deposition (ALD) was deposited.

Design/methodology/approach

Scanning electron microscope, Raman and UV-Vis spectroscopy were used to evaluate the influence of BL on the photovoltaic properties. Electrical parameters of manufactured DSSCs with and without BL were characterized by measurements of current-voltage characteristics under standard AM 1.5 radiation.

Findings

The TiO2 BL prevents the physical contact of fluorine-doped tin oxide (FTO) and the electrolyte and leads to increase in the cell’s overall efficiency, from 5.15 to 6.18%. Higher density of the BL, together with larger contact area and improved adherence between the TiO2 layer and FTO surface provide more electron pathways from TiO2 to FTO which facilitates electron transfer.

Originality/value

This paper demonstrates that the introduction of a BL into the photovoltaic device structure is an important step in technology of DSSCs to improve its efficiency. Moreover, the ALD is a powerful technique which allows for the highly reproducible growth of pinhole-free thin films with excellent thickness accuracy and conformality at low temperature.

Details

Microelectronics International, vol. 37 no. 2
Type: Research Article
ISSN: 1356-5362

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Article
Publication date: 20 June 2019

Barbara Swatowska, Piotr Panek, Dagmara Michoń and Aleksandra Drygała

The purpose of this study was the comparison and analysis of the electrical parameters of two kinds of silicon solar cells (mono- and multicrystalline) of different emitter…

129

Abstract

Purpose

The purpose of this study was the comparison and analysis of the electrical parameters of two kinds of silicon solar cells (mono- and multicrystalline) of different emitter resistance.

Design/methodology/approach

By controlling of diffusion parameters, silicon mono- (Cz-Si) and multicrystalline (mc-Si) solar cells with different emitter resistance values were produced – 22 and 48 Ω/□. On the basis of current-voltage measurements of cells and contact resistance mapping, the properties of final solar cells based on two different materials were compared. Additionally, the influence of temperature on PV cells efficiency and open circuit voltage (Uoc) were investigated. The PC1D simulation was useful to determine spectral dependence of external quantum efficiency of solar cells with different emitter resistance. The silicon solar cells of 25 cm2 area and 240 µm thickness were investigated.

Findings

Considering the all stages of cell technology, the best structure is silicon solar cell with sheet resistance (Rsheet) of 45-48 Ω/□. Producing of an emitter with this resistance allowed to obtain cells with a fill factor between 0.725 and 0.758, Uoc between 585 and 612 mV, short circuit current (Isc) between 724 and 820 mA.

Originality/value

Measurements and analysis confirmed that mono- and multicrystalline silicon solar cells with 48 Ω/□ emitter resistance have better parameters than cells with Rsheet of 22 Ω/□. The contact resistance is the highest for mc-Si with Rsheet of 48 Ω/□ and reaches the value 3.8 Ωcm.

Details

Microelectronics International, vol. 36 no. 3
Type: Research Article
ISSN: 1356-5362

Keywords

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