Abdeljalil NACHAOUI and Nabil R. NASSIF
This paper is concerned with the analysis of global uniqueness of the solution to the drift—diffusion models, for stationary flow of charges carriers in semiconductor devices. Two…
Abstract
This paper is concerned with the analysis of global uniqueness of the solution to the drift—diffusion models, for stationary flow of charges carriers in semiconductor devices. Two uniqueness cases are found. Firstly, small applied voltages with a proof introducing new ‘quasi‐monotony condition’ verified for solutions in W and not necessarily in H. Secondly, large applied voltage to the semiconductor with small 2D domain, and not large doping functions. These uniqueness cases allow the construction of algorithms that yield converging sequences of solutions.
Nayla HAYECK, Abdeljalil NACHAOUI and Nabil R. NASSIF
Using the topological degree of Leray‐Shauder, and Grisvard's results for elliptic equations with mixed boundary conditions, we extend Mock's results for the steady‐state Van…
Abstract
Using the topological degree of Leray‐Shauder, and Grisvard's results for elliptic equations with mixed boundary conditions, we extend Mock's results for the steady‐state Van Roosbroeck system, with the change from Neuman to Dirichlet boundary conditions occuring at a flat angle. Similar results are obtained for continuity equations that include a general recombination rate.