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Article
Publication date: 1 April 1992
C. DALLE, M.R. FRISCOURT and P.A. ROLLAND
Time and frequency domain complementary numerical models of microwave non‐linear circuits using two‐terminal active semiconductor devices are presented. Their main feature is the…
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Abstract
Time and frequency domain complementary numerical models of microwave non‐linear circuits using two‐terminal active semiconductor devices are presented. Their main feature is the use of numerical one‐dimensional macroscopic physical models as semiconductor device models. Their respective capability is illustrated by some results of a study devoted to the optimization of millimeter‐wave avalanche diode frequency multipliers.