COMPEL - The international journal for computation and mathematics in electrical and electronic engineering: Volume 6 Issue 1

BOUNDARY LIMITED HIGH FIELD TRANSPORT IN ULTRA SMALL DEVICES

A. Al‐OMAR, J.P. KRUSIUS

Boundary limited transport in small compound semiconductor devices is studied within the self‐consistent Monte Carlo method. New stable microscopic models fully accounting for…

DIFFUSION‐DRIFT MODELING OF STRONG INVERSION LAYERS

M.G. ANCONA

By generalizing the equation of state of the conduction electron gas in a semiconductor to include a dependence not only on electron density but also on the density gradient we…

ON THE CONDITIONING OF THE STEADY STATE SEMICONDUCTOR DEVICE PROBLEM

U. ASCHER, P.A. MARKOWICH, C. SCHMEISER, H. STEINRÜCK, R. WEISS

In this paper we carry out a conditioning analysis for the steady state semiconductor device problem. We consider various quasilinearizations as well as Gummel‐type iterations and…

CLOSED‐FORM METHOD FOR SOLVING THE STEADY‐STATE GENERALISED ENERGY‐MOMENTUM CONSERVATION EQUATIONS

E.M. AZOFF

The Boltzmann transport equation applied to electron transport in a heterostructure semiconductor is discussed. The closed‐form methods for solving the heterostructure…

PHYSICS FOR MODELS OF GALLIUM ARSENIDE DEVICES

Herbert S. BENNETT, Jeremiah R. LOWNEY

Numerically simulating the behavior of GaAs devices requires a model for the distorted densities of states, band edge shifts, ΔΕc and ΔΕv, and effective intrinsic carrier…

A NEW MODEL FOR THE DETERMINATION OF POINT DEFECT EQUILIBRIUM CONCENTRATIONS IN SILICON

M. BUDIL, E. GUERRERO, T. BRABEC, S. SELBERHERR, H. POETZL

In this paper the boundary conditions for point defect distributions in monocrystalline silicon are investigated. These boundary conditions are established by simple thermodynamic…

TWO‐DIMENSIONAL NUMERICAL MODELLING OF HEMT USING AN ENERGY TRANSPORT MODEL

F.A. BUOT

A two‐dimensional numerical computer simulation based on the analysis of the first three moments of the Boltzmann equation, known as the energy‐transport model, has been used to…

SELF‐CONSISTENT I‐V CHARACTERISTICS OF ULTRA‐SMALL DEVICES

M. CAHAY, M. McLENNAN, S. DATTA, M.S. LUNDSTROM

A method is presented for the incorporation of space‐charge effects into the analysis of one‐dimensional devices. At each bias, solutions of Schrödinger's and Poisson's equations…

A MODEL FOR COUPLED DOPANT DIFFUSION IN SILICON

N.E.B. COWERN, D.J. GODFREY

The simulation of coupled dopant diffusion in silicon is becoming increasingly important in integrated circuit technology, as device dimensions are reduced and efforts are made to…