COMPEL - The international journal for computation and mathematics in electrical and electronic engineering: Volume 18 Issue 1

Numerical investigation of a gas dynamic model for charge transport in semiconductors

A.M. Blokhin, A.A. Iohrdanidy

A mathematical gas dynamic model for semiconductor devices is numerically analysed. The well‐known ballistic diode problem is taken as an example.

An approach via the central limit theorem to randomization of Fourier’s transform

Guy Jumarie

By using the central limit theorem, it is possible to consider the Fourier’s transform of a stochastic process with independent increments as a Gaussian random variable of which…

Bispectrum estimation using AR‐modelling

Diego P. Ruiz, Antolino Gallego

In this paper we present a new autoregressive (AR) method for bispectrum estimation defined in terms of its third‐moment sequence. The method is based on the segmentation of data…

An energy‐transport model for semiconductor heterostructure devices: application to AlGaAs/GaAs MODFETs

Cedric Lab, Philippe Caussignac

A stationary 3D energy‐transport model valid for semiconductor heterostructure devices is derived from a semiclassical Boltznmann equation by the moment method. In addition to the…

Remark on Maxwell’s divergence equations

P. Hillion

The divergence equations in Maxwell’s theory are Gauss law and the statement that magnetic monopoles do not exist; from this point of view these two equations are fundamental…

Reduced‐order method for dielectric resonators using FEM and CFH

M.A. Kolbehdari, M.S. Nakhla

This paper describes an efficient reduced‐order method for the analysis of cylindrical dielectric resonators with an inhomogeneous dielectric medium. The field equations are…