UNIFIED SIMULATION MODEL FOR JUNCTION‐CONTROLLED FIELD‐EFFECT TRANSISTRORS
ISSN: 0332-1649
Article publication date: 1 April 1994
Abstract
An simple model for the simulation of the electrical behaviour of several types of junction controlled field‐effect transistors is proposed. It is based on the calculation of the carrier concentration in the channel by means of a self‐consistent solution of Schrödinger and Poisson's equation in the direction perpendicular to the current flow. Based on the carrier concentration the dc, the small‐signal, and also the noise properties of the devices may be simulated. The calculated characteristics of a sub‐quarter micron gate GaAs MESFET, a δ‐doped GaAs FET and a Velocity Modulation Transistor will be presented and discussed.
Citation
Schwierz, F., Nakov, V. and Roßberg, M. (1994), "UNIFIED SIMULATION MODEL FOR JUNCTION‐CONTROLLED FIELD‐EFFECT TRANSISTRORS", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 13 No. 4, pp. 817-829. https://doi.org/10.1108/eb051898
Publisher
:MCB UP Ltd
Copyright © 1994, MCB UP Limited