MIXED FINITE ELEMENT SIMULATION OF HETEROJUNCTION STRUCTURES INCLUDING A BOUNDARY LAYER MODEL FOR THE QUASI‐FERMI LEVELS
ISSN: 0332-1649
Article publication date: 1 April 1994
Abstract
Some results related to the algorithmic behaviour in semiconductor devices numerical simulations (‐static case‐), using mixed finite elements and operator splitting techniques have been presented in. The drift‐diffusion model written with the electrostatic potential φ and the quasi‐Fermi levels φn and φp is used.
Citation
Hecht, F. and Marrocco, A. (1994), "MIXED FINITE ELEMENT SIMULATION OF HETEROJUNCTION STRUCTURES INCLUDING A BOUNDARY LAYER MODEL FOR THE QUASI‐FERMI LEVELS", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 13 No. 4, pp. 757-770. https://doi.org/10.1108/eb051893
Publisher
:MCB UP Ltd
Copyright © 1994, MCB UP Limited