ETCH PROFILE EVOLUTION IN LOW PRESSURE RF PLASMA WITH AXIAL MAGNETIC FIELD
ISSN: 0332-1649
Article publication date: 1 April 1994
Abstract
The dry development of a photoresist is modelled using the analytical solution of the Boltzmann equation. It is proposed that at very low pressure and in the presence of a magnetic field, the etch rate of the resist can be calculated by integrating the ion flux. The simulation results illustrates improvement in both microuniformity and macrouniformity when the resist is etched under these process conditions.
Citation
Mathur, B.P., Arshak, K.I., Mc Donagh, D. and Arshak, A. (1994), "ETCH PROFILE EVOLUTION IN LOW PRESSURE RF PLASMA WITH AXIAL MAGNETIC FIELD", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 13 No. 4, pp. 677-684. https://doi.org/10.1108/eb051885
Publisher
:MCB UP Ltd
Copyright © 1994, MCB UP Limited