THE USE OF REALISTIC BANDSTRUCTURE IN IMPACT IONISATION CALCULATIONS FOR WIDE BANDGAP SEMICONDUCTORS: APPLICATION TO INP AND GaAS

Abstract

A non‐local pseudopotential model is used to generate realistic bandstructure for InP and GaAs. This is used to calculate the thresholds for impact ionisation and ionisation rates in these materials as a function of direction in wavevector space. Results are presented for a range of transitions.

Citation

Wilson, S.P., Brand, S., Beattie, A.R. and Abram, R.A. (1993), "THE USE OF REALISTIC BANDSTRUCTURE IN IMPACT IONISATION CALCULATIONS FOR WIDE BANDGAP SEMICONDUCTORS: APPLICATION TO INP AND GaAS", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 12 No. 4, pp. 457-473. https://doi.org/10.1108/eb051819