SIMULATION OF THE ELECTRICAL BEHAVIOUR OF GaAs MESFETS WITH DOPING AND LOW‐FIELD MOBILITY PROFILES IN THE ACTIVE LAYER

Abstract

A quasi‐two‐dimensional analytical model for GaAs MESFETs is proposed. It enables the calculation of the dc, the small‐signal, and the noise behaviour of GaAs MESFETs and takes into account both doping and low‐field mobility profiles in the active layer of the transistor. It is shown that the profile of the low‐field mobility near the bottom of the active layer has a considerable influence on the minimum noise figure.

Citation

Schwierz, F. (1993), "SIMULATION OF THE ELECTRICAL BEHAVIOUR OF GaAs MESFETS WITH DOPING AND LOW‐FIELD MOBILITY PROFILES IN THE ACTIVE LAYER", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 12 No. 4, pp. 353-359. https://doi.org/10.1108/eb051810